US 8,263,449 B2 · Method of manufacturing high electron mobility transistor

Abstract

A method of manufacturing a High Electron Mobility Transistor (HEMT) may include forming first and second material layers having different lattice constants on a substrate, forming a source, a drain, and a gate on the second material layer, and changing the second material layer between the gate and the drain into a different material layer, or changing a thickness of the second material layer, or forming a p-type semiconductor layer on the second material layer. The change in the second material layer may occur in an entire region of the second material layer between the gate and the drain, or only in a partial region of the second material layer adjacent to the gate. The p-type semiconductor layer may be formed on an entire top surface of the second material layer between the gate and the drain, or only on a partial region of the top surface adjacent to the gate.

Claims12

Dependent claims

A method of manufacturing a High Electron Mobility Transistor (HEMT), the method comprising:

forming a first material layer on a substrate;
forming a second material layer on the first material layer, the second material layer having a lattice constant different from that of the first material layer;
forming a source contact, a drain contact, and a gate contact on the second material layer;
and changing at least a portion of the second material layer between the gate and the drain into a different material layer,
wherein the source contact, the drain contact, and the gate contact directly contact the second material layer.

2 more elements

Dependencies are inferred from the claim text.

Method of manufacturing high electron mobility transistor

Life of this patent

Method of manufacturing high electron mobility transistor

Life of this patent

Abstract

Claims12