Pixel structure and method for forming the same

A method for forming a pixel structure, the pixel structure having at least one transistor and a first storage capacitor electrically connected to the transistor, the method comprising:

• forming a first conductive layer;
• covering an interlayer dielectric layer having a first opening on the first conductive layer;
• forming a second conductive layer on a part of the interlayer dielectric layer, the second conductive layer electrically connecting to the first conductive layer through the first opening;
• covering a passivation layer having a second opening on the transistor and the second conductive layer;
• forming a third conductive layer on a part of the passivation layer, the third conductive layer electrically connecting to the transistor through the second opening;
• and
• covering a fourth conductive layer on the second conductive layer and a part of the interlayer dielectric layer,
• wherein the first storage capacitor is formed by the third conductive layer, the passivation layer, the fourth conductive layer, and the second conductive layer.