Semiconductor device and method of forming an interposer package with through silicon vias

A method of making a semiconductor device, comprising:

• providing a temporary carrier;
• mounting a first semiconductor die over the temporary carrier;
• mounting a first dummy die having a first through-silicon via (TSV) over the temporary carrier;
• depositing encapsulant over the first semiconductor die and the first dummy die;
• forming a first conductive layer electrically connected to the first semiconductor die and first TSV;
• and
• forming a second conductive layer electrically connected to the first TSV.

A method of making a semiconductor device, comprising:

• providing a carrier;
• mounting a first semiconductor die over the carrier;
• mounting a second semiconductor die including a conductive via over the carrier;
• forming a first conductive layer connected to the first semiconductor die and the conductive via;
• and
• forming a second conductive layer connected to the conductive via.

A semiconductor device, comprising:

• a first semiconductor die;
• a first dummy die including a through-silicon via (TSV) extending through the first dummy die such that the TSV has a first surface coplanar with a first surface of the first semiconductor die;
• encapsulant deposited over and extends between the first semiconductor die and the first dummy die;
• a first conductive layer formed over the first surface of the first semiconductor die and the first surface of the TSV to electrically connect the first semiconductor die and the TSV;
• and
• a second conductive layer connected to a second surface of the TSV opposite the first surface of the TSV.

A semiconductor device, comprising:

• a first semiconductor die;
• a first dummy die including a via that has a first surface coplanar with a first surface of the first semiconductor die;
• a first conductive layer formed over the first surface of the first semiconductor die and the first surface of the via to electrically connect the first semiconductor die and the via;
• and
• a second conductive layer connected to a second surface of the via opposite the first surface of the via.