Semiconductor device and method of forming an IPD over a high-resistivity encapsulant separated from other IPDS and baseband circuit

A method of manufacturing a semiconductor device, comprising:

• providing a sacrificial substrate;
• forming a first insulating layer over the sacrificial substrate;
• forming a first conductive layer over the first insulating layer;
• forming a first integrated passive device (IPD) in a first region over the first conductive layer;
• forming a plurality of conductive pillars over the first conductive layer;
• disposing a first semiconductor die in a second region over the sacrificial substrate, the second region being separate from the first region;
• forming a first encapsulant over the first IPD to a top surface of the conductive pillars, the first encapsulant having a resistivity greater than 1.0 kohm-cm;
• forming a second IPD over the first encapsulant;
• forming a first insulating layer over the second IPD;
• removing the sacrificial substrate;
• disposing a second semiconductor die over the first conductive layer;
• forming a second encapsulant over the second semiconductor die;
• forming a thermally conductive layer over the second encapsulant;
• and
• forming a second insulating layer between the first encapsulant and second IPD.

A method of manufacturing a semiconductor device, comprising:

• providing a substrate;
• forming a first conductive layer over the substrate;
• forming a first integrated passive device (IPD) in a first region over the first conductive layer by,
• (a) forming a second conductive layer over the first conductive layer, and
• (b) forming a second insulating layer over the second conductive layer;
• forming a conductive pillar over the first IPD;
• forming a high-resistivity encapsulant over the first IPD to a top surface of the conductive pillar after forming the conductive pillar;
• and
• forming a second IPD over the high-resistivity encapsulant opposite the first IPD such that the second IPD is stacked with respect to the first IPD and separated by the encapsulant and the conductive pillar to reduce inter-device interference between the first and second IPD.

A method of manufacturing a semiconductor device, comprising:

• providing a substrate;
• forming a first conductive layer over the substrate;
• forming a first integrated passive device (IPD) in a first region over the first conductive layer;
• forming a conductive pillar over the first IPD;
• forming an encapsulant over the first IPD to a top surface of the conductive pillar after forming the conductive pillar;
• and
• forming a second IPD over the encapsulant opposite the first IPD such that the second IPD is stacked with respect to the first IPD and separated by the encapsulant to reduce inter-device interference between the first and second IPD.

A method of manufacturing a semiconductor device, comprising:

• providing a substrate;
• forming a first conductive layer over the substrate;
• forming a first integrated passive device (IPD) in a first region over the first conductive layer;
• disposing a first semiconductor die in a second region over the substrate, the second region being laterally offset and separate from the first region;
• forming a conductive pillar over the first IPD;
• forming a first encapsulant over the first IPD to a top surface of the conductive pillars and first semiconductor die;
• and
• forming a second IPD over the first encapsulant opposite the first IPD such that the second IPD is stacked with respect to the first IPD and separated by the first encapsulant and the conductive pillar to reduce inter-device interference between the first and second IPD, wherein the first IPD includes a capacitor or resistor and the second IPD includes an inductor.