Capping layer formation onto a dual damescene interconnect

A conducting interconnect for a semiconductor device, comprising:

• (i) a dielectric layer having one or more conductors provided in an upper surface thereof, said upper surface being functionalized by reacting the dielectric surface with an organic compound in a liquid phase, the said organic compound having the following general formula:
• wherein X is a functional group, R is an organosiloxane group Y1 is either a functional group or an organic group or organosiloxane group, and Y2 is either a functional group or an organic group or organosiloxane group, and wherein the functional group (s) is/are independently selected from:
• a secondary amine, a tertiary amine, acetamide, trifluoroacetamide, imidazole, urea, an alkyoxy, acryloxy, acetate, SH, an alkylthiol, sulfonate, methanosulfonate, and cyanide, and salts thereof, and wherein at least one of the organic groups contains one or more branching points;
• and
• (ii) a capping layer provided on an upper surface of at least some of the one or more conductors.

Use of an organic compound to functionalize a dielectric layer having one or more conductors on a surface thereof, wherein said use comprises reacting the organic compound with the dielectric layer prior to deposition of a capping layer on an upper surface of at least some of the one or more conductors, and wherein said organic compound has the following general formula:

• wherein X is a functional group, R is an organosiloxane group, Y1 is either a functional group, and Y2 is either a functional group or an organic group or organosiloxane group, and wherein the functional groups are independently selected from:
• NH2, a secondary amine, a tertiary amine, acetamide, trifluoroacetamide, imidazole, urea, OH, an alkyoxy, acryloxy, acetate, SH, an alkylthiol, sulfonate, methanosulfonate, and cyanide, and salts thereof;
• and
• wherein at least one of the organic groups contains one or more branching points.