US 8,263,421 B2 · Manufacturing method of semiconductor device

Abstract

An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an initial stage, glow discharge plasma is generated by supplying high-frequency powers with different frequencies, and a lower part of the film near an interface with the gate insulating film is formed under a first film formation condition, which is low in film formation rate but results in a good quality film. Thereafter, an upper part of the film is deposited under a second film formation condition with higher film formation rate, and further, a buffer layer is stacked on the microcrystalline semiconductor film.

Claims15

Dependent claims

A manufacturing method of a display device comprising:

forming a gate electrode and a pixel electrode over a substrate having an insulating surface;
forming an insulating film over the gate electrode and the pixel electrode;
introducing the substrate into a vacuum chamber;
forming a lower part of a microcrystalline semiconductor film in a vacuum chamber under a first film formation condition in which glow discharge plasma is generated by superposed application of a first high-frequency power having a frequency with a wavelength of 10 m or longer and a second high-frequency power having a frequency with a wavelength of shorter than 10 m, to an electrode that generates glow discharge plasma;
and
depositing an upper part of the microcrystalline semiconductor film under a second film formation condition in which at least one of substrate temperature, power, frequency, flow rate of source gas, and degree of vacuum is different from that under the first film formation condition.

3 more elements

Dependencies are inferred from the claim text.

Manufacturing method of semiconductor device

Life of this patent

Manufacturing method of semiconductor device

Life of this patent

Abstract

Claims15