Method of forming fine pattern using block copolymer

A method of forming a fine pattern, the method comprising:

• forming an organic guide layer on a substrate;
• forming a photoresist pattern on the organic guide layer, the photoresist pattern including a plurality of openings exposing portions of the organic guide layer;
• forming a material layer on the exposed portions of the organic guide layer and on the photoresist pattern, the material layer including block copolymers;
• rearranging the material layer through phase separation of the block copolymers into a fine pattern layer, such that the fine pattern layer includes a plurality of first blocks and a plurality of second blocks arranged in an alternating pattern, the plurality of first blocks and the plurality of the second blocks having different repeating units of the block copolymers;
• forming a fine pattern mask by removing either the plurality of first blocks or the plurality of second blocks from the fine pattern layer, the fine pattern mask exposing the organic guide layer and a portion of a top surface of the photoresist pattern;
• and
• partially etching the exposed organic guide layer and the exposed top surface of the photoresist pattern by using the fine pattern mask as an etching mask.