Vacuum treatment method

Abstract

A vacuum treatment method and a vacuum treatment apparatus are provided in which the SiH2/SiH ratio does not increase even when the deposition rate is increased, thereby deterioration in the film quality is prevented and a high level of productivity can be achieved. A vacuum treatment method comprising the steps of heating a substrate (8) disposed inside a deposition chamber (6) under a reduced pressure atmosphere using a heat spreader (a heating device) (5), and supplying electric power to a discharge electrode (3) disposed in a position facing the substrate (8), thereby conducting a deposition on the substrate (8), wherein the deposition is conducted in a state where the temperature difference between the substrate (8) and the discharge electrode (3) is not more than 30° C. The deposition may also be conducted with the gap between the substrate (8) and the discharge electrode (3) set to not more than 7.5 mm.

Dependencies are inferred from the claim text.