Ti-based film forming method and storage medium

A Ti-based film forming method for forming a Ti-based film on a surface of an object to be processed by using an apparatus including a chamber accommodating the object to be processed, a gas injecting member for injecting a processing gas containing Ti into the chamber, the gas injecting member having a first heating unit, a mounting table for mounting thereon the object to be processed in the chamber, wherein the mounting table has at least a surface made of a material containing Al, and a second heating unit for heating the mounting table, the Ti-based film forming method comprising:

• cleaning an inside of the chamber by introducing a cleaning gas containing fluorine into the chamber while the object to be processed is not provided on the mounting table;
• forming a pre-coated film at least on a surface of the gas injecting member by injecting processing gases from the gas injecting member into the chamber while maintaining the mounting table at a first temperature via the second heating unit without having the object to be processed provided on the mounting table and maintaining the gas injecting member at a second temperature via the first heating unit, the second temperature being different from the first temperature;
• after forming the pre-coated film, increasing a temperature of the mounting table to a third temperature via the second heating unit and increasing a temperature of the gas injecting member to a fourth temperature via the first heating unit, the fourth temperature being different from the third temperature;
• and
• forming a Ti-based film on the object to be processed by mounting the object to be processed on the mounting table while the mounting table is heated at the third temperature and the gas injecting member is heated at the fourth temperature, and supplying the processing gases into the chamber.