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US 8,262,796 B2Granted
β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
AssigneeWaseda University
InventorsNoboru Ichinose, Kiyoshi Shimamura, Kazuo Aoki, Encarnacion Antonia Garcia Villora
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Abstract
A thin-film single crystal growing method includes preparing a substrate, irradiating an excitation beam on a metallic target made of a pure metal or an alloy in a predetermined atmosphere, and combining chemical species including any of atoms, molecules, and ions released from the metallic target by irradiation of the excitation beam with atoms contained in the predetermined atmosphere to form a thin film on the substrate.
Claims14
A thin-film single crystal growing method, comprising:
- preparing a substrate comprising a β-Ga2O3 single crystal;
- irradiating an excitation beam on a metallic target comprising Ga or an alloy comprising Ga in an atmosphere comprising at least a gas selected from an oxygen gas, an oxygen gas comprising ozone, a pure ozone gas, an N2O gas, an NO2 gas, an oxygen gas comprising oxygen radicals, and oxygen radicals;
- and
- combining chemical species including one of atoms, molecules, and ions released from the metallic target by irradiation of the excitation beam with the gas to form a thin-film single crystal β-Ga2O3 on the substrate,
- wherein the β-Ga2O3 single crystal substrate is grown in a b-axis <010> direction.
2 more elements
A thin-film single crystal growing method, comprising:
- preparing a substrate comprising a β-Ga2O3 single crystal;
- irradiating an excitation beam on a metallic target comprising Ga or an alloy comprising Ga in an atmosphere comprising at least a gas selected from an oxygen gas, an oxygen gas comprising ozone, a pure ozone gas, an N2O gas, an NO2 gas, an oxygen gas comprising oxygen radicals, and oxygen radicals;
- and
- combining chemical species including one of atoms, molecules, and ions released from the metallic target by irradiation of the excitation beam with the gas to form a thin-film single crystal comprising β-Ga2O3 on the substrate,
- wherein the β-Ga2O3 single crystal substrate is grown in a c-axis <001> direction.
2 more elements
Dependencies are inferred from the claim text.