Substrate processing apparatus and reaction container

A substrate processing apparatus, comprising:

• a reaction tube having an inner and an outer wall, such that the inner walls defines a reaction chamber capable of accommodating a plurality of substrates;
• a buffer chamber disposed on the inner wall of said reaction tube within said reaction chamber and having a plurality of buffer chamber holes disposed in a wall of said buffer chamber to facilitate gas flow between the buffer chamber and the reaction chamber;
• a first gas introducing part that introduces a first processing gas into said buffer chamber;
• a second gas introducing part, disposed outside said buffer chamber, that introduces a second processing gas into said reaction chamber;
• a gas exhaust opening provided at the inner wall of said reaction tube and at a position opposite from said buffer chamber such that said substrates are positioned therebetween;
• and
• a pair of electrode-protecting tubes disposed in said buffer chamber and extending lengthwise along a stacking direction of the substrates such that the distance between the tubes and the buffer chamber holes prevents plasma generated within the buffer chamber from dispersing and leaking outside the buffer chamber,
• wherein
• a film is formed on surface of said substrates by supplying said first processing gas introduced into said reaction chamber from said first gas introducing part through said buffer chamber holes and said second processing gas interchangeably for a plurality of times.

A substrate processing apparatus, comprising:

• a reaction tube having an inner and an outer wall, such that the inner walls defines a reaction chamber capable of accommodating a plurality of substrates;
• a buffer chamber disposed on the inner wall of said reaction tube within said reaction chamber such that a back wall of the buffer chamber is said inner wall and,
• a plurality of buffer chamber holes disposed in a front wall of said buffer chamber to facilitate gas flow between the buffer chamber and the reaction chamber, where the front wall is longer than a distance between the front wall and the back wall;
• a first gas introducing part that introduces a first processing gas into said buffer chamber;
• a second gas introducing part, disposed outside said buffer chamber, that introduces a second processing gas into said reaction chamber;
• a gas exhaust opening provided at the inner wall of said reaction tube and at a position opposite from said buffer chamber such that said substrates are positioned therebetween;
• and
• a pair of electrode-protecting tubes disposed in said buffer chamber and extending lengthwise along a stacking direction of the substrates such that the buffer chamber holes are between the tubes, the tubes are closer to the front wall than the back wall;
• wherein
• a film is formed on surface of said substrates by supplying said first processing gas introduced into said reaction chamber from said first gas introducing part through said buffer chamber holes and said second processing gas interchangeably for a plurality of times.