US 8,261,617 B2 · Micro piezoresistive pressure sensor and manufacturing method thereof

Abstract

A micro semiconductor-type pressure sensor and a manufacturing method thereof are provided. The micro semi-conductor-type pressure sensor is implemented by etching a cavity-formation region of a substrate to form a plurality of trenches, oxidizing the plurality of trenches through a thermal oxidation process to form a cavity-formation oxide layer, forming a membrane-formation material layer on upper portions of the cavity-formation oxide layer and the substrate, forming a plurality of etching holes in the membrane-formation material layer, removing the cavity-formation oxide layer through the plurality of etching holes to form a cavity buried in the substrate, forming a membrane reinforcing layer on an upper portion of the membrane-formation material layer to form a membrane for closing the cavity, and forming sensitive films made of a piezoresisive material on an upper portion of the membrane.

Claims22

Dependent claims

A micro piezoresistive pressure sensor comprising:

a silicon substrate;
a cavity formed in a sensor region of the silicon substrate;
a membrane formed over the silicon substrate and configured to substantially enclose the cavity;
a sensitive film, including piezoresistive material, formed over the membrane;
and
one or more semiconductor integrated devices which are formed in a device region of the silicon substrate,
wherein the semiconductor integrated devices are complementary metal oxide semiconductor (CMOS) devices,
wherein the membrane is coupled to the substrate in a CMOS process other than a bonding method, and
wherein the membrane is coupled to the sensitive film in a CMOS process other than a bonding method.

6 more elements

Dependencies are inferred from the claim text.

Micro piezoresistive pressure sensor and manufacturing method thereof

Life of this patent

Micro piezoresistive pressure sensor and manufacturing method thereof

Life of this patent

Abstract

Claims22