Organosilicon nanocluster, method of preparing the same and method of forming thin film using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJong Baek Seon, Hyun Dam Jeong, Sang Yoon Lee
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Abstract
Disclosed herein is an organosilicon nanocluster, wherein a silicon cluster is substituted with a conductive organic material, a silicon thin film including the same, a thin film transistor including the silicon thin film, a display device including the thin film transistor, and methods of forming the same. The organosilicon nanocluster may more easily and efficiently form a thin film while maintaining electrical characteristics of an amorphous silicon thin film.
Claims23
An organosilicon nanocluster, wherein a silicon cluster is substituted with a conductive organic material represented by the following Formula 1 or 2:
- wherein,
- Ar is a substituted or unsubstituted heteroaryl group or heteroarylene group of about 2 to about 30 carbon atoms, or a substituted or unsubstituted aryl group or arylene group of about 6 to about 30 carbon atoms, and
- a, b and c are from about 0 to about 20, respectively (provided that a+b+c>0, at least one of a+b and b+c≧2, and at least one of a and c is ≧1).
A method of preparing an organosilicon nanocluster, comprising:
- substituting a conductive organic material, represented by the following Formula 5 or 6, with alkali metals or alkali earth metals;
- and
- reacting the conductive organic material substituted with alkali metals or alkali earth metals with a silicon cluster, thereby substituting the silicon cluster with the conductive organic material:
- wherein,
- Ar is a substituted or unsubstituted heteroaryl group or heteroarylene group of about 2 to about 30 carbon atoms, or a substituted or unsubstituted aryl group or arylene group of about 6 to about 30 carbon atoms, and
- a, b and c are from about 0 to about 20, respectively (provided that a+b+c>0, at least one of a+b and b+c≧2, and at least one of a and c is ≧1).
Dependencies are inferred from the claim text.