Charge detection device and charge detection method, solid-state imaging device and driving method thereof, and imaging device

A charge detection method comprising the steps of:

• accumulating signal charges as a target to be measured in a second conductive type of charge accumulation region disposed in a first conductive type of predetermined region provided in a substrate;
• detecting a change of a threshold voltage occurring in a transistor by accumulating the signal charges in the charge accumulation region, wherein the transistor includes a second conductive type of drain region disposed in the predetermined region of the substrate, a second conductive type of source region disposed in the predetermined region of the substrate, and a gate formed via an insulating film on a second conductive type of channel region disposed between the drain region and the source region, wherein a first conductive type of channel barrier region is disposed between the channel region and the charge accumulation region;
• and
• sweeping the signal charges accumulated in the charge accumulation region into a charge sweep region different from the drain region.

A solid-state imaging device comprising:

• a substrate having a first conductive type of predetermined region;
• a photoelectric conversion element disposed in the predetermined region of the substrate and generating signal charges in response to incident light;
• a second conductive type of drain region disposed in the predetermined region of the substrate;
• a second conductive type of source region disposed in the predetermined region of the substrate;
• a second conductive type of channel region disposed between the drain region and the source region;
• a gate formed via an insulating film on the channel region;
• a second conductive type of charge accumulation region disposed in the predetermined region of the substrate and changing a threshold voltage of a transistor having the drain region, the source region, and the gate by accumulating the signal charges generated by the photoelectric conversion element;
• a first conductive type of channel barrier region disposed between the channel region and the charge accumulation region;
• and
• a charge sweep region sweeping away the signal charges accumulated in the charge accumulation region.

A method of driving a solid-state imaging device comprising the steps of:

• generating signal charges in response to incident light by a photoelectric conversion element disposed in a first conductive type of predetermined region provided in a substrate;
• accumulating the signal charges generated by the photoelectric conversion element in a second conductive type of charge accumulation region disposed in the predetermined region of the substrate;
• detecting a change of a threshold voltage occurring in a transistor by accumulating the signal charges in the charge accumulation region, wherein the transistor includes a second conductive type of drain region disposed in the predetermined region of the substrate, a second conductive type of source region disposed in the predetermined region of the substrate, and a gate formed via an insulating film on a second conductive type of channel region disposed between the drain region and the source region, wherein a first conductive type of channel barrier region is disposed between the channel region and the charge accumulation region;
• and
• sweeping the signal charges accumulated in the charge accumulation region into a charge sweep region different from the drain region.

An imaging device comprising:

• a solid-state imaging device;
• and
• an optical system guiding incident light to a photoelectric conversion element;
• wherein the solid-state imaging device includes
• a substrate having a first conductive type of predetermined region,
• the photoelectric conversion element disposed in the predetermined region of the substrate and generating signal charges in response to the incident light,
• a second conductive type of drain region disposed in the predetermined region of the substrate,
• a second conductive type of source region disposed in the predetermined region of the substrate,
• a second conductive type of channel region disposed between the drain region and the source region,
• a gate formed via an insulating film on the channel region,
• a second conductive type of charge accumulation region disposed in the predetermined region of the substrate and changing a threshold voltage of a transistor having the drain region, the source region, and the gate by accumulating the signal charges generated by the photoelectric conversion element,
• a first conductive type of channel barrier region disposed between the channel region and the charge accumulation region, and
• a charge sweep region sweeping away the signal charges accumulated in the charge accumulation region.