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AssigneeIdemitsu Kosan Co., Ltd.
InventorsKoki Yano, Kazuyoshi Inoue
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This invention provides an amorphous oxide semiconductor thin film, which is insoluble in a phosphoric acid-based etching solution and is soluble in an oxalic acid-based etching solution by optimizing the amounts of indium, tin, and zinc, a method of producing the amorphous oxide semiconductor thin film, etc. An image display device (1) comprises a glass substrate (10), a liquid crystal (40) as a light control element, a bottom gate-type thin film transistor (1) for driving the liquid crystal (40), a pixel electrode (30), and an opposing electrode (50). The amorphous oxide semiconductor thin film (2) in the bottom gate-type thin film transistor (1) has a carrier density of less than 10+18 cm−3, is insoluble in a phosphoric acid-based etching liquid, and is soluble in an oxalic acid-based etching liquid.
An amorphous oxide semiconductor thin film having a carrier density of less than 10+18 cm−3, and being insoluble in a phosphoric acid-based etching solution and soluble in an oxalic acid-based etching solution.
A sputtering target comprising indium, tin, zinc, a IIIB group element other than indium (at least one selected from B, Al, Ga and Tl) and oxygen, wherein atomic ratios of the number of indium atoms ([In]), the number of tin atoms ([Sn]), the number of zinc atoms ([Zn]) and the number of atoms of the IIIB group element ([IIIB]) are:
A sputtering target comprising indium, tin, zinc, a lanthanoid series element (at least one selected from La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu) and oxygen, wherein atomic ratios of the number of indium atoms ([In]), the number of tin atoms ([Sn]), the number of zinc atoms ([Zn]) and the number of lanthanoid series atoms ([Ln]) are:
Dependencies are inferred from the claim text.