Method and apparatus of fabricating semiconductor device
AssigneeFujitsu Semiconductor Limited
InventorMitsuaki Hori
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Abstract
An underlying film forming section forming an underlying film on a semiconductor substrate is provided to an apparatus of fabricating a semiconductor device. The apparatus is further provided with a cooling section cooling the semiconductor substrate and a plasma nitriding section introducing active nitrogen into the underlying film while keeping the temperature of the semiconductor substrate cooled by the cooling section at 100° C. or below. The semiconductor substrate is cooled by using liquid nitrogen or liquid helium, and by cooling a stage on which the semiconductor substrate is placed.
Claims16
A method of fabricating a semiconductor device comprising:
- forming a silicon oxide film on a semiconductor substrate by thermal oxidation in a first insulating film forming unit;
- after said forming a silicon oxide film, transferring said semiconductor substrate to a cooling unit using a transferring unit;
- decreasing a temperature of said semiconductor substrate from a temperature of the thermal oxidation to 100° C. or below in non-oxidative atmosphere in said cooling unit;
- after said decreasing a temperature, transferring said semiconductor substrate to a nitriding unit using said transferring unit;
- and
- introducing active nitrogen into said silicon oxide film while maintaining temperature of said semiconductor substrate at 100° C. or below in said nitriding unit.
A method of fabricating a semiconductor device comprising:
- forming a silicon oxide film on a semiconductor substrate by thermal oxidation in a first insulating film forming unit;
- after the forming a silicon oxide film, transferring said semiconductor substrate to a cooling unit using a transferring unit;
- decreasing a temperature of said semiconductor substrate from a temperature of the thermal oxidation to 100° C. or below in non-oxidative atmosphere in said cooling unit;
- after the decreasing a temperature, transferring said semiconductor substrate to a nitriding unit using said transferring unit;
- and
- introducing active nitrogen into said silicon oxide film while maintaining temperature of said semiconductor substrate at 100° C. or below in said nitriding unit.
A method of fabricating a semiconductor device comprising:
- forming a first silicon oxide film on a first semiconductor substrate by thermal oxidation;
- decreasing a temperature of said first semiconductor substrate from a temperature of the thermal oxidation to 100° C. or below in non-oxidative atmosphere;
- after the decreasing the temperature of said first semiconductor substrate, introducing active nitrogen into said first silicon oxide film while maintaining temperature of said first semiconductor substrate at 100° C. or below;
- forming a second silicon oxide film on a second semiconductor substrate by thermal oxidation;
- decreasing a temperature of said second semiconductor substrate from a temperature of the thermal oxidation to 100° C. or below in non-oxidative atmosphere;
- after the decreasing the temperature of said second semiconductor substrate, introducing active nitrogen into said second silicon oxide film while maintaining temperature of said second semiconductor substrate at 100° C. or below;
- forming a third silicon oxide film on a third semiconductor substrate by thermal oxidation;
- decreasing a temperature of said third semiconductor substrate from a temperature of the thermal oxidation to 100° C. or below in non-oxidative atmosphere;
- and
- after the decreasing the temperature of said third semiconductor substrate, introducing active nitrogen into said third silicon oxide film while maintaining temperature of said third semiconductor substrate at 100° C. or below,
- wherein said introducing active nitrogen into said first silicon oxide film, said decreasing a temperature of said second semiconductor substrate, and said forming a third silicon oxide film are carried out in parallel with one another.
Dependencies are inferred from the claim text.