Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method

A pattern forming method, comprising:

• forming a resist film by applying, to a substrate, a resin composition containing a resin of which solubility in a positive developer which is an alkali developer increases and solubility in a negative developer consisting essentially of an organic solvent decreases under an action of an acid, the resin having a lactone group and a monocyclic or polycyclic alicyclic hydrocarbon structure, wherein the resin composition is capable of forming a resist film of which solubility in the positive developer increases and solubility in the negative developer decreases upon irradiation with actinic rays or radiation;
• exposing the resist film;
• and
• developing the resist film after the exposing with the negative developer consisting essentially of one or more organic solvents,
• wherein the lactone group is selected from the following groups:
• wherein n2 represents an integer of 0 to 4;
• and
• Rb2 represents a substituent, and when n2 is an integer of 2 or more, a plurality of Rb2's may be the same or different, and the plurality of Rb2's may combine with each other to form a ring.