Method and structure of a thick metal layer using multiple deposition chambers
AssigneeST Microelectronics SA
InventorArdeshir J. Sidhwa
Life of this patent
Estimating the term…
Abstract
A thick metal layer is formed on a semiconductor integrated circuit in multiple different deposition chambers. A first portion of the metal layer is formed in a first deposition chamber, the first thickness being approximately half the target thickness. The substrate is then removed from the first chamber and transported to a second chamber. The deposition of the same metal layer continues in a second chamber, having the same grain structure and orientation. The second portion of the metal layer is grown to achieve the final thickness. By using two different deposition chambers to form the single metal layer, layers in excess of 25,000 angstroms in thickness can be obtained.
Claims15
A method of forming a metal layer, comprising:
- depositing a first metal on a substrate to a first thickness in a first deposition chamber;
- transferring the substrate out of the first deposition chamber;
- moving the substrate into an environment having an atmosphere containing some oxygen after transferring the substrate out of the first deposition chamber;
- forming a thin oxide layer on the first metal layer while in the atmosphere;
- moving the substrate into a second deposition chamber different from the first deposition chamber;
- and
- depositing a second metal on the thin oxide layer, overlying the first metal to a second thickness in the second chamber, wherein the second metal is the same as the first metal to obtain said metal layer;
- and
- the first metal and second metal are electrically connected.
Dependencies are inferred from the claim text.