Method and system for fracturing a pattern using charged particle beam lithography with multiple exposure passes having different dosages
AssigneeD2S, Inc.
InventorsHarold Robert Zable, Akira Fujimura
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Abstract
In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein base dosages for a plurality of exposure passes are different from each other. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, wherein a plurality of charged particle beam exposure passes are used, with base dosage levels being different for different exposure passes.
Claims25
A method for fracturing or mask data preparation or proximity effect correction for charged particle beam lithography comprising:
- setting a base dosage level for each of a plurality of exposures passes, wherein the base dosage levels for at least two of the exposure passes are different;
- and
- determining a plurality of shots for each of the plurality of exposure passes, wherein all shots for each exposure pass in the plurality of exposure passes are selected from the group consisting of variable shaped beam (VSB) shots and character projection (CP) shots.
A method for forming a set of patterns on a surface using charged particle beam lithography comprising:
- a) setting a base dosage level for an exposure pass;
- b) exposing a plurality of shots for the exposure pass using the set base dosage level, wherein all shots in the plurality of shots for the exposure pass are selected from the group consisting of variable shaped beam (VSB) shots and character projection (CP) shots;
- and
- c) repeating steps a) and b) for at least one additional exposure pass,
- wherein the sum of the pluralities of shots for all of the exposure passes can form the set of patterns on the surface, and wherein the base dosage levels for at least two of the exposure passes are different.
A method for manufacturing an integrated circuit using an optical lithographic process, the optical lithographic process using a reticle, the method comprising:
- a) providing a charged particle beam source;
- b) setting a base dosage level for an exposure pass;
- c) exposing a plurality of shots for the exposure pass using the set base dosage level, wherein all shots in the plurality of shots for the exposure pass are selected from the group consisting of variable shaped beam (VSB) shots and character projection (CP) shots;
- and
- d) repeating steps b) and c) for at least one additional exposure pass,
- wherein the sum of the pluralities of shots for all of the exposure passes can form a set of desired patterns on the reticle, and wherein the base dosage levels for at least two of the exposure passes are different.
A system for fracturing or mask data preparation or proximity effect correction for use with shaped beam charged particle beam lithography comprising:
- an input device capable of receiving a set of patterns to be formed on a surface;
- a computation device capable of determining a set of shots that can be used to form the set of patterns using a plurality of exposure passes, wherein each exposure pass has a base dosage level, and wherein the base dosage levels for at least two of the exposure passes are different, and wherein all shots in the set of shots are selected from the group consisting of variable shaped beam (VSB) shots and character projection (CP) shots;
- and
- an output device capable of outputting the determined set of shots.
Dependencies are inferred from the claim text.