Organic thin film transistor device and organic thin film light-emitting transistor

An organic thin film transistor comprising a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a compound represented by the following formula (1):

• in the formula (1), Ar1 is represented by the following formula (2);
• and Ar3 is represented by the following formula (3):
• in the formulae (2) and (3), R1 to R10 each independently represents a hydrogen atom, a halogen atom, an alkyl group having from 1 to 30 carbon atoms, a haloalkyl group having from 1 to 30 carbon atoms, an alkoxyl group having from 1 to 30 carbon atoms, a haloalkoxyl group having from 1 to 30 carbon atoms, an alkylthio group having from 1 to 30 carbon atoms, a haloalkylthio group having from 1 to 30 carbon atoms, an alkylamino group having from 1 to 30 carbon atoms, a dialkylamino group having from 2 to 30 carbon atoms (the alkyl groups may be bonded to each other to form a nitrogen atom-containing cyclic structure), an alkylsulfonyl group having from 1 to 30 carbon atoms, a haloalkylsulfonyl group having from 1 to 30 carbon atoms, an aromatic hydrocarbon group having from 6 to 60 carbon atoms, an aromatic heterocyclic group having from 1 to 60 carbon atoms, an optionally substituted alkylsilyl group having from 1 to 30 carbon atoms or a cyano group;
• and each of these groups may have a substituent,
• R1 to R5 and R6 to R10 may each form a saturated or unsaturated cyclic structure together with an adjacent group thereto,
• Ar2 represents an optionally substituted aromatic hydrocarbon group having from 6 to 60 carbon atoms or an optionally substituted aromatic heterocyclic group having from 1 to 60 carbon atoms, and
• n represents an integer of 2 to 20.

An organic thin film transistor comprising a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a compound represented by the following formula (5):

• in the formula (5), R21 to R38 each independently represents a hydrogen atom, a halogen atom, an alkyl group having from 1 to 30 carbon atoms, a haloalkyl group having from 1 to 30 carbon atoms, an alkoxyl group having from 1 to 30 carbon atoms, a haloalkoxyl group having from 1 to 30 carbon atoms, an alkylthio group having from 1 to 30 carbon atoms, a haloalkylthio group having from 1 to 30 carbon atoms, an alkylamino group having from 1 to 30 carbon atoms, a dialkylamino group having from 2 to 30 carbon atoms (the alkyl groups may be bonded to each other to form a nitrogen atom-containing cyclic structure), an alkylsulfonyl group having from 1 to 30 carbon atoms, a haloalkylsulfonyl group having from 1 to 30 carbon atoms, an aromatic hydrocarbon group having from 6 to 60 carbon atoms, an aromatic heterocyclic group having from 1 to 60 carbon atoms, an optionally substituted alkylsilyl group having from 1 to 30 carbon atoms or a cyano group;
• and each of these groups may have a substituent, and
• R21 to R25 and R26 to R30 may each form a saturated cyclic structure together with an adjacent group thereto.