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US 8,216,950 B2Granted
Capacitive element fabrication method
AssigneeEudyna Devices Inc.
InventorNorikazu Iwagami
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Abstract
A semiconductor device includes an operating layer made of a semiconductor and a silicon nitride film formed on the operating layer with the use of a mixed gas that includes mono-silane gas, hydrogen gas, and nitrogen gas, by a plasma CVD apparatus, under a condition that a flow rate of the hydrogen gas is 0.2 percent to 5 percent to an overall flow rate.
Claims6
A fabrication method of a capacitive element device comprising:
- forming a first metal layer;
- and
- forming an insulating film made of a silicon nitride film on the first metal layer with a mixed gas that includes mono-silane gas, hydrogen gas, and nitrogen gas, in a plasma CVD apparatus, under a condition that a flow rate of the hydrogen gas is 0.2 percent to 5 percent to an overall flow rate;
- forming a second metal layer on the insulating layer.
1 more element
Dependencies are inferred from the claim text.