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AssigneesCanon Kabushiki Kaisha, Tokyo University of Science Educational Foundation Administrative Organization
InventorsKenji Takashima, Makoto Kubota, Soichiro Okamura, Takashi Nakajima, Tomosato Okubo, Yosuke Inoue
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Provided are a ferroelectric material having good ferroelectricity and good insulation property, and a ferroelectric device using the ferroelectric material. In the present invention, the ferroelectric material includes a metal oxide having a perovskite-type crystal structure, in which: the metal oxide contains bismuth ferrite whose iron is substituted by manganese, and at least one of a copper oxide and a nickel oxide; the bismuth ferrite is substituted by manganese at a substitution ratio of 0.5 at. % or more to 20 at. % or less with respect to a total amount of iron and manganese; and at least one of the copper oxide and the nickel oxide is added in an amount of 0.5 mol % or more to 20 mol % or less with respect to the bismuth ferrite whose iron is substituted by manganese.
A ferroelectric material comprising a metal oxide, wherein
A method of producing a ferroelectric material formed of a metal oxide, the metal oxide containing bismuth ferrite whose iron is substituted by manganese, and at least one of a copper oxide and a nickel oxide, iron of the bismuth ferrite being substituted by manganese at a substitution ratio of 0.5 at. % or more to 20 at. % or less with respect to a total amount of iron and manganese, and at least one of the copper oxide and the nickel oxide being added in an amount of 0.5 mol % or more to 20 mol % or less with respect to the bismuth ferrite whose iron is substituted by manganese, the ferroelectric material forms a thin film, the method comprising forming the thin film with a mixed solution of metal salts of bismuth, iron, manganese, and at least one of copper and nickel by a chemical solution deposition method.
Dependencies are inferred from the claim text.