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US 8,216,767 B2Granted
Patterning process and chemical amplified photoresist with a photodegradable base
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien-Wei Wang, Ching-Yu Chang, Tsai-Sheng Gau, Burn Jeng Lin
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Abstract
A method for fabricating an integrated circuit device is disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photodegradable base material; and exposing at least a portion of the second material layer.
Claims19
A photoresist material used for semiconductor device patterning, the photoresist material comprising:
- a polymer;
- a photoacid generator;
- a quencher base;
- an electron acceptor;
- and
- a photodegradable base.
3 more elements
A method for forming a pattern on a semiconductor device, the method comprising:
- providing a substrate;
- forming a first material layer over the substrate;
- forming a second material layer over the first material layer, wherein the second material layer comprises a photodegradable base material;
- and
- exposing one or more portions of the second material layer.
2 more elements
Dependencies are inferred from the claim text.