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US 8,216,372 B2Granted
Apparatus for growing high quality silicon single crystal ingot and growing method using the same
AssigneeSiltron Inc.
InventorHyon-Jong Cho
Life of this patent
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Abstract
The invention relates to an apparatus and method for growing a high quality Si single crystal ingot and a Si single crystal ingot and wafer produced thereby. The growth apparatus controls the oxygen concentration of the Si single crystal ingot to various values thereby producing the Si single crystal ingot with high productivity and extremely controlled growth defects.
Claims10
An apparatus for growing silicon single crystal by the Czochralski method, comprising:
- a chamber;
- a crucible provided inside the chamber, and containing silicon melt;
- drive means for turning and elevating the crucible so as to maintain a solid-liquid interface to a predetermined level;
- a heater provided at a side of the crucible to heat silicon melt, and having a localized maximum heat output part with a narrow cross section or a high resistance in a predetermined position positioned below a surface of silicon melt and formed around a middle portion of the heater for controlling the quantity of oxygen dissolution out of the crucible;
- and
- a pulling mechanism for pulling a growing silicon single crystal ingot from silicon melt.
3 more elements
Dependencies are inferred from the claim text.