Nonvolatile CMOS-compatible logic circuits and related operating methods
AssigneeGlobalfoundries Inc.
InventorsAn Chen, Zoran Krivokapic
Life of this patent
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Abstract
Apparatus and related fabrication and operating methods are provided for logic circuits that include ferromagnetic elements. An exemplary logic circuit includes a first ferromagnetic element having a first ferromagnetic layer, a second ferromagnetic element having a second ferromagnetic layer, and a transistor coupled to the first ferromagnetic element. The first transistor is configured to allow current to flow through the first ferromagnetic element. The current influences the magnetization direction of the first ferromagnetic layer, which, in turn, influences the magnetization direction of the second ferromagnetic layer.
Claims20
A logic circuit comprising:
- a first ferromagnetic element having a first ferromagnetic layer;
- a second ferromagnetic element having a second ferromagnetic layer;
- and
- a first transistor coupled to the first ferromagnetic element, wherein the first transistor is configured to allow a first current to flow through the first ferromagnetic element, the first current influencing a magnetization direction of the first ferromagnetic layer, the magnetization direction of the first ferromagnetic layer influencing a magnetization direction of the second ferromagnetic layer.
A method for operating a logic circuit including an input ferromagnetic element and an output ferromagnetic element having a magnetization direction influenced by a magnetization direction of the input ferromagnetic element, the method comprising:
- activating an input transistor coupled to the input ferromagnetic element to allow an input current to flow through the input ferromagnetic element, the input current influencing the magnetization direction of the input ferromagnetic element;
- activating an output transistor coupled to the output ferromagnetic element to allow an output current to flow through the output ferromagnetic element, wherein a magnitude of the output current is influenced by the magnetization direction of the output ferromagnetic element;
- and
- determining the magnetization direction of the output ferromagnetic element in response to the output current;
- and
- determining a digital output value for the logic circuit based on the magnetization direction of the output ferromagnetic element.
A method for fabricating a logic circuit, the method comprising:
- forming a first ferromagnetic element having a first ferromagnetic layer;
- forming a second ferromagnetic element having a second ferromagnetic layer, wherein the second ferromagnetic element is arranged with respect to the first ferromagnetic element such that a magnetization direction of the first ferromagnetic layer influences a magnetization direction of the second ferromagnetic layer;
- forming a first transistor coupled to the first ferromagnetic element, wherein the first transistor is configured to allow a first current to flow through the first ferromagnetic element, the first current influencing the magnetization direction of the first ferromagnetic layer;
- and
- forming a second transistor coupled to the second ferromagnetic element, wherein the second transistor is configured to allow a second current to flow through the second ferromagnetic element.
Dependencies are inferred from the claim text.