Boron nitride nanotubes
AssigneesNational Institute of Aerospace Associates, The United States of America as represented by the Administration of NASA
InventorsMichael W. Smith, Kevin Jordan, Cheol Park
Life of this patent
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Abstract
Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.
Claims24
A process for producing boron nitride nanotubes and nanostructures, which process comprises thermally exciting a boron-containing target in a chamber under nitrogen pressure which is elevated above 2 atmospheres and less than 250 atmospheres.
A process for producing boron nitride nanotubes, which process comprises:
- (a) creating a source of boron vapor;
- (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, the nitrogen gas being provided at a pressure elevated above 2 atmospheres and less than 250 atmospheres;
- and
- (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.
Dependencies are inferred from the claim text.