Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom

An optically sensitive device comprising:

• a first contact and a second contact, each having a work function;
• an optically sensitive material between the first contact and the second contact, the optically sensitive material comprising a p-type semiconductor, and the optically sensitive material having a work function;
• circuitry configured to apply a bias voltage between the first contact and the second contact;
• the magnitude of the work function of the optically sensitive material being at least 0.4 eV greater than the magnitude of the work function of the first contact, and also at least 0.4 eV greater than the magnitude of the work function of the second contact;
• the optically sensitive material having an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact;
• the first contact providing injection of electrons and blocking the extraction of holes;
• and
• the interface between the first contact and the optically sensitive material providing a surface recombination velocity less than 1 cm/s.