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US 8,192,651 B2Granted
Aluminum thick film composition(s), electrode(s), semiconductor device(s), and methods of making thereof
AssigneeE. I. du Pont de Nemours and Company Dupont (UK) Limited
InventorsRichard John Sheffield Young, Michael Rose, Julie Ann Raby
Life of this patent
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Abstract
The present invention is directed to a thick film conductor composition comprised of (a) aluminum-containing powder; (b) one or more glass frit compositions; dispersed in (c) organic medium wherein at least one of said glass frit compositions has a softening point of less than 400° C.
Claims10
A thick film conductor composition consisting of:
- (a) aluminum-containing powder, wherein the average particle size distribution of the aluminum powder is in the range of 3 to 50 microns,
- (b) one or more lead borosilicate glass frit compositions, wherein the one or more glass frit compositions are 1 to 2.5 wt % of the thick film conductor composition, dispersed in
- (c) organic medium
- wherein at least one of said glass frit compositions has a softening point of less than 400 degrees C., wherein the inorganic components are 40-95 wt % of the thick film conductor composition, and wherein the aluminum-containing powder is 96.7-98.6 wt % of the inorganic components.
1 more element
Dependencies are inferred from the claim text.