Methods of forming conductive vias through substrates, and structures and assemblies resulting therefrom
AssigneeMicron Technology, Inc.
InventorRickie C. Lake
Life of this patent
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Abstract
Methods of forming conductive elements on and in a substrate include forming a layer of conductive material over a surface of a substrate prior to forming a plurality of vias through the substrate from an opposing surface of the substrate to the layer of conductive material. In some embodiments, a temporary carrier may be secured to the layer of conductive material on a side thereof opposite the substrate prior to forming the vias. Structures, including workpieces formed using such methods, are also disclosed.
Claims20
A method for forming conductive elements on and in a substrate, comprising:
- at least substantially entirely covering a first major surface of a substrate with a first conductive material;
- subsequently forming a plurality of vias through the substrate from a second major surface opposing the first major surface to the first conductive material;
- forming each via of the plurality of vias to comprise a bottom surface comprising a portion of the first conductive material;
- and
- depositing a second conductive material within each via of the plurality of vias and establishing electrical contact between the second conductive material within each via and the first conductive material to form a plurality of conductive vias extending through the substrate.
A method for forming conductive elements through a semiconductor wafer, comprising:
- at least substantially covering a first major surface of a semiconductor wafer with a first conductive material;
- attaching a temporary carrier to the first conductive material on a side thereof opposite the semiconductor wafer;
- subsequently forming a plurality of vias through the semiconductor wafer from a second major surface of the semiconductor wafer to the first conductive material;
- and
- depositing a second conductive material within each via of the plurality of vias and establishing electrical contact between the second conductive material within each via and the first conductive material to form a plurality of conductive vias extending through the semiconductor wafer.
Dependencies are inferred from the claim text.