Self-contained proximity effect correction inspiration for advanced lithography (special)
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Ming Chang, Shy-Jay Lin
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Abstract
A lithography method is disclosed. An exemplary lithography method includes providing an energy sensitive resist material on a substrate; providing a desired pattern; performing a lithography process on the substrate, wherein the lithography process includes exposing the energy sensitive resist material to a charged particle beam, such that the desired pattern is transferred to the energy sensitive resist material; and directing the charged particle beam from an off state to a defocus state, wherein the defocus state compensates for the backscattered energy, thereby reducing proximity effects.
Claims20
A lithography method comprising:
- providing an energy sensitive resist material on a substrate;
- providing a desired pattern;
- performing a lithography process on the substrate, wherein the lithography process includes exposing the energy sensitive resist material to a charged particle beam, such that the desired pattern is transferred to the energy sensitive resist material;
- and
- directing the charged particle beam from an on state to an off state to a defocus state, wherein the defocus state compensates for the backscattered energy, thereby reducing proximity effects.
A lithography method comprising:
- providing an energy sensitive resist material on a substrate;
- providing a desired pattern;
- performing a lithography process on the substrate, wherein the lithography process includes exposing the energy sensitive resist material to a charged particle beam, such that the desired pattern is transferred to the energy sensitive resist material;
- and
- tuning the charged particle beam to more than one state during the lithography process, wherein the tuning comprising tuning from an on state to an off state and wherein at least one state compensates for backscattered energy, thereby reducing proximity effects.
A lithography method comprising:
- performing a lithography process on an energy sensitive material on a substrate that delineates a desired pattern on the energy sensitive material using a charged particle beam, wherein the lithography process includes:
- delineating the desired pattern on the energy sensitive material using the charged particle beam in an on state, wherein the charged particle beam passes through a main deflector, an aperture, and a projection lens system;
- directing the charged particle beam in the on state to an off state by deflecting the charged particle beam to the aperture, wherein the aperture prevents the charged particle beam from landing on the substrate;
- and
- directing the charged particle beam in the off state to a defocus state by passing the charged particle beam through the projection lens system.
Dependencies are inferred from the claim text.