Method for fabricating LED chip comprising reduced mask count and lift-off processing

A method for fabricating a light emitting diode chip, comprising:

• forming a semiconductor layer and a conductive layer sequentially on a substrate, wherein a first type semiconductor material layer, a light emitting material layer and a second type semiconductor material layer form the semiconductor layer;
• forming a first patterned photoresist layer on the conductive layer, wherein the first patterned photoresist layer comprises a first photoresist block and a second photoresist block, and a thickness of the first photoresist block is thinner than a thickness of the second photoresist block;
• removing a portion of the conductive layer and a portion of the semiconductor layer with the first patterned photoresist layer as a mask to form a semiconductor device layer;
• reducing a thickness of the first patterned photoresist layer until the first photoresist block is removed completely and using the remaining second photoresist block as a mask to partially remove the conductive layer to form a current spreading layer, wherein the current spreading layer partially exposes the semiconductor device layer;
• removing the remaining second photoresist block;
• and
• forming a patterned dielectric layer and a plurality of electrodes on the current spreading layer and the semiconductor device layer.