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US 8,164,700 B2Granted
Thin film transistor array, method for manufacturing the same and active matrix display
AssigneeToppan Printing Co., Ltd.
InventorsKaoru Hatta, Toru Okubo, Ryohei Matsubara
Life of this patent
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Abstract
One embodiment of the present invention is a thin film transistor array including an insulating substrate, a plurality of thin film transistors and a sealing layer. The sealing layer is stripe-shaped and covers a plurality of the thin film transistors. The sealing layer is formed over the insulating substrate.
Claims19
A thin film transistor array, comprising:
- an insulating substrate;
- a plurality of thin film transistors, each of the thin film transistors comprising a source electrode, a drain electrode, a gate electrode and a semiconductor layer between the source electrode and the drain electrode;
- and
- a plurality of sealing layers, each of the sealing layers being stripe-shaped, and each of the sealing layers covering the plurality of the thin film transistors and formed over the insulating substrate.
1 more element
A thin film transistor array, comprising:
- an insulating substrate;
- a plurality of thin film transistors,
- each of the thin film transistors, comprising:
- a gate electrode on the insulating substrate;
- a gate insulating layer;
- a source electrode and a drain electrode, the gate electrode overlapping the source electrode and the drain electrode through the gate insulating layer;
- a semiconductor layer between the source electrode and the drain electrode;
- a pixel electrode connected to the drain electrode;
- and
- a capacitor electrode, the pixel electrode overlapping the capacitor electrode through the gate insulating layer,
- the thin film transistors arranged in a matrix-shaped and being with a plurality of gate wires connected to a plurality of the gate electrodes and a plurality of source wires connected to a plurality of the source electrodes;
- and
- a plurality of sealing layers, each of the sealing layers formed over at least the semiconductor layer, each of the sealing layers being stripe-shaped over the insulating substrate and each of the sealing layers covering a plurality of the thin film transistors.
10 more elements
Dependencies are inferred from the claim text.