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US 8,159,049 B2Granted
Semiconductor structure for imaging detectors
AssigneeDetection Technology Oy
InventorIiro Hietanen
Life of this patent
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AssigneeDetection Technology Oy
InventorIiro Hietanen
Estimating the term…
There is disclosed a photo-detector array including a plurality of sub-arrays of photo-detectors, the photo-detectors of each sub-array being formed on a substrate with an active area of each photo-detector being formed on a surface of the substrate, there further being formed for each photo-detector a conductive via through the substrate from an upper surface thereof to a lower surface thereof to connect the active area of each photo-detector to the lower surface of the substrate, wherein a plurality of said sub-arrays of photo-detectors are placed adjacent to each other in a matrix to form the photo-detector array. An imaging system comprising: a radiation detector including such a photo detector array, a radiation source facing the radiation detector, and means for controlling the radiation detector and the radiation source is also disclosed. A method for making such an array is also disclosed.
A semiconductor substrate including a plurality of photodetectors, each photodetector of the plurality having an active area on a first surface of the substrate and a further active area on the side of a second surface of the substrate, wherein each photodetector of the plurality is provided with an adjacent conductive via electrically isolated from the substrate, from the first surface of the substrate to the second surface of the substrate, for connecting the active area to the second surface of the substrate, wherein the conductive vias comprise respective polysilicon conductive elements formed on the inner walls of the vias, the second surface providing electrical connections for the active areas and the further active areas of the plurality of photodetectors, and wherein there is provided a further conductive element from the side of the first surface of the substrate to the side of the second surface within at least one of the conductive vias, said further conductive element being electrically isolated from the polysilicon conductive element of the conductive via within which said further conductive element is contained.
A semiconductor substrate including a plurality of photodetectors, each photodetector of the plurality having an active area on a first surface of the substrate and a further active area on the side of a second surface of the substrate, wherein each photodetector of the plurality is provided with an adjacent conductive via electrically isolated from the substrate, said via extending from the first surface of the substrate to the second surface of the substrate and connecting the active area to the second surface of the substrate, wherein the conductive vias comprise respective polysilicon conductive elements formed on the inner walls of the vias, and wherein there is provided a further conductive element comprising an additional electrically isolated via from the side of the first surface of the substrate to the side of the second surface within at least one of the conductive vias, said further conductive element being electrically isolated from the polysilicon conductive element of the conductive via within which said further conductive element is contained, and further wherein there is provided a guard ring structure for each photodetector formed at the first surface of the substrate, the additionally electrically isolated via connecting the guard ring to the second surface of the substrate, the second surface providing electrical connections for the active areas, the further active areas, and the guard rings of the plurality of photodetectors.
Dependencies are inferred from the claim text.