Method of manufacturing a liquid crystal display device with a semiconductor film including zinc oxide
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorKengo Akimoto
Life of this patent
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Abstract
To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode. The semiconductor device includes a gate insulating film formed by using a silicon oxide film or a silicon oxynitride film over a gate electrode, an Al film or an Al alloy film over the gate insulating film, a ZnO film to which an n-type or p-type impurity is added over the Al film or the Al alloy film, and a ZnO semiconductor film over the ZnO film to which an n-type or p-type impurity is added and the gate insulating film.
Claims21
A method of manufacturing a liquid crystal display device having an active matrix portion, the method comprising:
- forming a metal film over a first substrate;
- forming a conductive film comprising an oxide over and in contact with the metal film;
- forming a semiconductor film containing zinc oxide as a channel formation region, over and in contact with the conductive film;
- removing a portion of the conductive film, wherein the portion is out of contact with the semiconductor film prior to removing the portion;
- forming a closed pattern of a sealant around the active matrix portion;
- dropping liquid crystal composition in the closed pattern;
- and
- attaching the first substrate and a second substrate to each other after dropping the liquid crystal composition.
A method of manufacturing a liquid crystal display device comprising:
- forming a thin film transistor over a first substrate by the method comprising:
- forming a metal film over the first substrate;
- forming a conductive film comprising an oxide over and in contact with the metal film;
- forming a semiconductor film comprising zinc oxide over and in contact with the conductive film;
- forming a gate electrode adjacent to the semiconductor film with a gate insulating film interposed therebetween;
- and
- removing a portion of the conductive film, wherein the portion is out of contact with the semiconductor film prior to removing the portion
- forming a pixel electrode over the first substrate wherein the pixel electrode is electrically connected to the thin film transistor;
- forming a closed pattern of a sealant over the first substrate;
- dropping liquid crystal composition over the pixel electrode in the closed pattern;
- and
- attaching a second substrate to the first substrate with the liquid crystal composition between the first substrate and the second substrate.
A method of manufacturing a liquid crystal display device comprising:
- forming a thin film transistor over a first substrate by a method comprising:
- forming a gate electrode;
- forming a gate insulating film formed over the gate electrode;
- forming a metal film formed over the first substrate;
- forming a conductive film comprising an oxide on and in contact with the metal film;
- forming a semiconductor film comprising zinc oxide on and in contact with the conductive film and the gate insulating film interposed therebetween;
- and
- removing a portion of the conductive film, wherein the portion is out of contact with the semiconductor film prior to removing the portion
- forming an insulating film comprising a resin material on the semiconductor film;
- forming a pixel electrode over the insulating film wherein the pixel electrode is electrically connected to the thin film transistor through a contact hole of the insulating film;
- forming a closed pattern of a sealant over the first substrate;
- dropping liquid crystal composition over the pixel electrode in the closed pattern;
- and
- attaching a second substrate to the first substrate with the liquid crystal composition between the first substrate and the second substrate.
A method of manufacturing a liquid crystal display device comprising:
- forming a gate electrode over a first substrate;
- forming a gate insulating film over the gate electrode;
- forming a metal film over the first substrate;
- forming a conductive film comprising an oxide on and in contact with the metal film;
- and
- forming a semiconductor film comprising zinc oxide on and in contact with the conductive film and the gate insulating film;
- removing a portion of the conductive film, wherein the portion is out of contact with the semiconductor film prior to removing the portion
- forming an insulating film on the semiconductor film;
- forming a pixel electrode over the insulating film wherein the pixel electrode is in contact with the conductive film through a contact hole of the insulating film;
- forming a closed pattern of a sealant over the first substrate;
- dropping liquid crystal composition over the pixel electrode in the closed pattern;
- and
- attaching a second substrate to the first substrate with the liquid crystal composition between the first substrate and the second substrate.
Dependencies are inferred from the claim text.