Resist sensitizer
AssigneeMassachusetts Institute of Technology
InventorTheodore H. Fedynyshyn
Life of this patent
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Abstract
Methods and compositions for enhancing the sensitivity of a resist composition are disclosed. In one aspect, compositions for use with a matrix material (e.g., a lithographically sensitive polymeric material) can be formulated with an acid generator and a sensitizer, where the sensitizer can be present in a relatively small amount. The sensitizer can include a compound with one or more silicon-silicon bonds, and can act to enhance the efficiency of acid generation when the resist is impinged by a selected lithographic radiation. The methods of the present invention can be especially useful in performing short wavelength (e.g., less than 200 nm) lithography, or for processes such as e-beam lithography, which traditionally suffer from low throughput.
Claims51
A method of imaging a resist in a lithographic process, comprising:
- forming a resist on a substrate, the resist capable of being imaged by lithographic radiation, the resist comprising:
- a) a polymeric matrix material, wherein the polymeric matrix material does not include substantial silicon-silicon atom bonding,
- b) an acid-generator for creating an acid when the resist is exposed to the lithographic radiation, and
- c) a sensitizer for increasing the sensitivity of the resist to the lithographic radiation, the sensitizer comprising a compound having at least one silicon-silicon bond;
- and
- applying the lithographic radiation to the resist to oxidize at least one silicon-silicon bond and thereby enhance imaging, wherein the sensitizer comprises less than about 0.10 weight fraction of the total amount of the acid-generator, the sensitizer, and the polymeric matrix material.
A composition for generating an acid during lithographic processing, comprising:
- a polymeric matrix material capable of undergoing an acid catalyzed reaction with the acid formed by the acid-generator, wherein the polymeric matrix material does not include substantial silicon-silicon atom bonding,
- an acid-generator capable of creating an acid when activated by lithographic radiation;
- and
- a sensitizer for increasing efficiency of acid generation when activated by lithographic radiation;
- the sensitizer comprising a compound having at least one silicon-silicon bond,
- the compound being susceptible to oxidation upon exposure to lithographic radiation, wherein the sensitizer comprises less than about 0.10 weight fraction of the total amount of the acid-generator, the sensitizer, and the polymeric matrix material.
A method of imaging a resist in a lithographic process, comprising:
- forming a resist on a substrate, the resist capable of being imaged by lithographic radiation, the resist comprising:
- a) an acid-generator for creating an acid when the resist is exposed to the lithographic radiation, and
- b) a sensitizer for increasing the sensitivity of the resist to the lithographic radiation, the sensitizer comprising a compound having at least one silicon-silicon bond;
- applying the lithographic radiation to the resist to oxidize at least one silicon-silicon bond and thereby enhance imaging;
- and
- contacting a developer with the resist to remove portions of the resist unexposed to the lithographic radiation.
A composition for generating an acid during lithographic processing, comprising:
- an acid-generator capable of creating an acid when activated by lithographic radiation;
- and
- a sensitizer for increasing efficiency of acid generation when activated by lithographic radiation;
- the sensitizer comprising a non-polymeric organosilicon composition having at least one silicon-silicon bond,
- the compound being susceptible to oxidation upon exposure to lithographic radiation, wherein the sensitizer comprises less than about 0.10 weight fraction relative to the total amount of the composition.
Dependencies are inferred from the claim text.