# US 8,153,031 B2 · In-Ga-Zn-Sn type oxide sinter and target for physical film deposition > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,153,031 B2 - Document ID: US8153031B2 - Status: Granted - Kind: B2 - Application number: 12/599,548 - Filed: 2007-11-30 - Published: 2011-10-27 - Granted: 2012-04-10 - Earliest claimed: 2007-05-11 - Assignees: Idemitsu Kosan Co., Ltd. - Inventors: Koki Yano; Kazuyoshi Inoue - Web page: https://patentgrep.com/patent/US8153031B2 ## CPC - C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy} - C04B 35/01: based on oxide ceramics - C04B 35/453: based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates - C04B 35/457: based on tin oxides or stannates - C23C 14/08: Oxides (C23C14/10 takes precedence) - C04B 2235/3284: Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof - C04B 2235/3286: Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate - C04B 2235/3293: Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO] - C04B 2235/5409: expressed by specific surface values - C04B 2235/5436: micrometer sized, i.e. from 1 to 100 micron - C04B 2235/5445: submicron sized, i.e. from 0,1 to 1 micron - C04B 2235/6585: at an oxygen percentage above that of air - C04B 2235/77: Density - C04B 2235/80: Phases present in the sintered or melt-cast ceramic products other than the main phase - C04B 2235/963: Surface properties, e.g. surface roughness - H10P 14/22: using physical deposition, e.g. vacuum deposition or sputtering - H10P 14/3426: {Oxides} - H10P 14/3434: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract An oxide sintered body including an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin element (Sn), and including a compound shown by Ga2In6Sn2O16 or (Ga,In)2O3. ## Claims ### Claim 1 An oxide sintered body comprising an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin element (Sn), and comprising a compound shown by Ga2In6Sn2O16 or (Ga,In)2O3. ### Claim 2 (depends on 1) The oxide sintered body according to claim 1, wherein the atomic ratio of each element to the total (In+Ga+Zn+Sn) of the indium element (In), gallium element (Ga), zinc element (Sn) and tin element (Sn) satisfies the following relationships: 0.15