# US 8,149,500 B2 · Bragg mirror and method for making same

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- Number: US 8,149,500 B2
- Document ID: US8149500B2
- Status: Granted
- Kind: B2
- Application number: 12/697,242
- Filed: 2010-01-30
- Published: 2010-05-20
- Granted: 2012-04-03
- Earliest claimed: 2007-02-28
- Assignees: TriQuint Semiconductor, Inc.
- Inventors: Ed Godshalk; Guillaume Bouche
- Web page: https://patentgrep.com/patent/US8149500B2

## CPC

- H03H 9/175: {Acoustic mirrors}
- H03H 3/04: for obtaining desired frequency or temperature coefficient
- H03H 2003/025: {the resonators or networks comprising an acoustic mirror}
- H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P)

## Abstract

In an embodiment, set forth by way of example and not limitation, a Bragg mirror includes a first bi-layer of a first thickness and a second bi-layer of a second thickness which is different from the first thickness. In this exemplary embodiment, the first bi-layer consists essentially of a first high impedance layer and a first low impedance layer, and the second bi-layer of a second thickness which is different from the first thickness, the second bi-layer consisting essentially of a second high impedance layer and a second low impedance layer. Preferably, the first bi-layer is configured to substantially reflect a first wavelength and the second bi-layer is configured to substantially reflect a second wavelength different from the first wavelength.

## Claims

### Claim 1

Bragg mirror comprising:
two adjacent first bi-layers, each of a first thickness, each of said first bi-layers consisting essentially of a first high impedance layer and a first low impedance layer; and
a second bi-layer juxtaposed with said two adjacent first bi-layers, said second bi-layer of a second thickness which is different from said first thickness, said second bi-layer consisting essentially of a second high impedance layer and a second low impedance layer;
whereby each said first bi-layer is configured to substantially reflect a first wavelength and said second bi-layer is configured to substantially reflect a second wavelength different from said first wavelength.

### Claim 2 (depends on 1)

A Bragg mirror as recited in claim 1 wherein said first thickness is approximately ½ of said first wavelength and wherein said second thickness is approximately ½ of said second wavelength.

### Claim 3 (depends on 2)

A Bragg mirror as recited in claim 2 wherein said Bragg mirror is an acoustical Bragg mirror.

### Claim 4 (depends on 3)

A Bragg mirror as recited in claim 3 wherein said first wavelength is the wavelength of a longitudinal wave and wherein said second wavelength is the wavelength of a shear wave.

### Claim 5 (depends on 3)

A Bragg mirror as recited in claim 3 wherein said first bi-layer and said second bi-layer are two of three or more bi-layers comprising a multiplicity of bi-layers.

### Claim 6 (depends on 5)

A Bragg mirror as recited in claim 5 wherein each of said multiplicity of bi-layers is selected from one of said first thickness and said second thickness.

### Claim 7 (depends on 6)

A Bragg mirror as recited in claim 6 wherein said Bragg mirror is supported by a substrate, and the thinner of said first bi-layer and said second bi-layer is closer to said substrate.

### Claim 8 (depends on 1)

A Bragg mirror as recited in claim 1 wherein said Bragg mirror includes two adjacent first bi-layers juxtaposed with two adjacent second bi-layers.

### Claim 9 (depends on 1)

A Bragg mirror as recited in claim 1 wherein said high impedance layers are selected from the group consisting essentially of AIN, W, TiW, Si3N4 and Mo.

### Claim 10 (depends on 1)

A Bragg mirror as recited in claim 1 wherein said low impedance layers are selected from the group consisting essentially of SiO2, SiOC, BCB, and polymers.

### Claim 11

A method for making a Bragg mirror comprising:
preparing a substrate;
forming two adjacent first bi-layers, each of a first thickness over said substrate by forming a first high-impedance material on said prepared substrate at one-quarter of a wavelength of a first wavelength to be reflected and then forming a first low-impedance material over said first high-impedance material at one-quarter of a wavelength of said first wavelength to be reflected, such that said first bi-layer is one-half of a wavelength of said first wavelength to be reflected; and
forming a second bi-layer juxtaposed with said two adjacent first bi-layers, said second bi-layer of a second thickness over said first bi-layer by forming a second high-impedance material on said prepared substrate at one-quarter of a wavelength of a second wavelength to be reflected and then forming a second low-impedance material over said second high-impedance material at one-quarter of a wavelength of said second wavelength to be reflected, such that said second bi-layer is one-half of a wavelength of said second wavelength to be reflected;
whereby each said first bi-layer is configured to substantially reflect said first wavelength and said second bi-layer is configured to substantially reflect said second wavelength different from said first wavelength.

### Claim 12 (depends on 11)

A method for making a Bragg mirror as recited in claim 11, wherein said first high impedance material and said second high impedance material are different thicknesses of the same material, and wherein said first low impedance material and said second low impedance material are different thicknesses of the same material.