# US 8,148,887 B2 · Light emitting diode lamp and light emitting device

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- Number: US 8,148,887 B2
- Document ID: US8148887B2
- Status: Granted
- Kind: B2
- Application number: 12/222,408
- Filed: 2008-08-08
- Published: 2009-07-02
- Granted: 2012-04-03
- Earliest claimed: 2004-02-18
- Assignees: National Institute for Materials Science
- Inventors: Naoto Hirosaki; Ken Sakuma; Kyota Ueda; Hajime Yamamoto
- Web page: https://patentgrep.com/patent/US8148887B2

## CPC

- C09K 11/77348: {Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides}
- C09K 11/0883: {Arsenides; Nitrides; Phosphides}
- H10H 20/8512: {Wavelength conversion materials}
- H10W 72/5522: {comprising gold [Au]}
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- Y02B 20/00: Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y02B: CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS

## Abstract

A bullet type light emitting diode lamp or a chip-type light emitting diode lamp includes a semiconductor light emitting element, and a plurality of fluorescent materials that absorb part or whole of light emitted from the semiconductor light emitting element, and emit fluorescence at a wavelength different from that of the absorbed light. The fluorescent materials include a phosphor of a CaAlSiN3 crystalline phase.

## Claims

### Claim 1

A bullet type light emitting diode lamp or a chip-type light emitting diode lamp to be mounted on a substrate, comprising: a semiconductor light emitting element, and a plurality of fluorescent materials that absorb part or whole of light emitted from the semiconductor light emitting element, and emit fluorescence at a wavelength different from that of the absorbed light,
wherein the plurality of fluorescent materials comprise a phosphor composed of a CaAlSiN3 crystalline phase.

### Claim 2 (depends on 1)

The bullet type light emitting diode lamp or the chip-type light emitting diode lamp to be mounted on a substrate according to claim 1, wherein
the phosphor has a main emission wavelength of 585 nm to 780 nm, and emits light in a range of “red” by a general chromaticity classification, according to system color names of JIS Z8110.

### Claim 3 (depends on 1)

The bullet type light emitting diode lamp or the chip-type light emitting diode lamp to be mounted on a substrate according to claim 1, wherein
the bullet type light emitting diode lamp or the chip-type light emitting diode lamp to be mounted on a substrate emits light in a color of a chromaticity coordinate of x=0.34 to 0.38 and y=0.32 to 0.42 in a chromaticity diagram (CIE) of an XYZ colorimetric system according to JIS Z8701.

### Claim 4

A visible light emitting device, comprising:
a semiconductor light emitting element that emits bluish purple or blue light,
a support member for placing the semiconductor light emitting element therein,
a terminal for supplying electric power to the semiconductor light emitting element, and
a fluorescent material that absorbs part or whole of light emitted from the semiconductor light emitting element, and emits fluorescence at a wavelength different from that of the absorbed light, wherein
the fluorescent material comprises a phosphor of a CaAlSiN3 crystalline phase that is obtained by firing using an electric furnace of a resistance heating type.

### Claim 5 (depends on 4)

The light emitting device according to claim 4, wherein the phosphor of the CaAlSiN3 crystalline phase is obtained by heating after firing atmosphere is made vacuum.

### Claim 6 (depends on 4)

The light emitting device according to claim 4, wherein the phosphor of the CaAlSiN3 crystalline phase is obtained by firing using a crucible made of boron nitride.

### Claim 7 (depends on 4)

The light emitting device according to claim 4, wherein the phosphor of the CaAlSiN3 crystalline phase is obtained by pulverizing after firing in nitride atmosphere.

### Claim 8 (depends on 4)

The light emitting device according to claim 4, wherein the phosphor of the CaAlSiN3 crystalline phase has a main emission wavelength of 585 nm to 780 nm, and emits light in a range of “red” by a general chromaticity classification, according to system color names of JIS Z8110.

### Claim 9 (depends on 4)

The light emitting device according to claim 4, wherein the fluorescent material is essentially the CaAlSiN3 crystalline.

### Claim 10 (depends on 4)

The light emitting device according to claim 4, further comprising a plurality of further bullet type light emitting diode lamps or chip-type light emitting diode lamps, wherein the respective plurality of fluorescent materials comprises CaAlSiN3 crystalline phase and a second phosphor, the CaAlSiN3 crystalline phase and the second phosphor being mixed in respectively different ratios so as to respectively produce different color light when irradiated by the respective semiconductor light emitting element.

### Claim 11 (depends on 4)

The visible light emitting device according to claim 4, in combination with a plurality of further visible light emitting devices, each of the plurality of further visible light emitting devices comprising a fluorescent material comprising CaAlSiN3 crystalline phase and a second phosphor, the CaAlSiN3 crystalline phase and the second phosphor being mixed in respectively different ratios so as to respectively produce different color light when irradiated by the respective semiconductor light emitting element.