# US 8,148,807 B2 · Packaged microelectronic devices and associated systems

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- Number: US 8,148,807 B2
- Document ID: US8148807B2
- Status: Granted
- Kind: B2
- Application number: 12/796,740
- Filed: 2010-06-09
- Published: 2010-09-30
- Granted: 2012-04-03
- Earliest claimed: 2008-06-10
- Assignees: Micron Technology, Inc.
- Inventors: Choon Kuan Lee; Chin Hui Chong; David J. Corisis
- Web page: https://patentgrep.com/patent/US8148807B2

## CPC

- H10W 90/00: Package configurations
- H10W 20/023: {the interconnections being through-semiconductor vias}
- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W 74/117: {the substrate having spherical bumps for external connection}
- H10W 70/656: Fan-in layouts
- H10W 72/321: {Structures or relative sizes of die-attach connectors}
- H10W 72/859: {Bump connectors and bond wires}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 72/944: {Dispositions of multiple bond pads}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 74/15: on active surfaces of flip-chip devices, e.g. underfills
- H10W 90/22: the stacked chips being on both top and bottom sides of a package substrate, interposer or RDL
- H10W 90/26: the stacked chips being of the same size without any chips being laterally offset, e.g. chip stacks having a rectangular shape
- H10W 90/297: {characterised by the through-semiconductor vias [TSVs] in the stacked chips}
- H10W 90/722: {between stacked chips}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/732: {between stacked chips}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Packaged microelectronic devices and methods for manufacturing packaged microelectronic devices are disclosed herein. In one embodiment, a packaged microelectronic device can include a support member, a first die attached to the support member, and a second die attached to the first die in a stacked configuration. The device can also include an attachment feature between the first and second dies. The attachment feature can be composed of a dielectric adhesive material. The attachment feature includes (a) a single, unitary structure covering at least approximately all of the back side of the second die, and (b) a plurality of interconnect structures electrically coupled to internal active features of both the first die and the second die.

## Claims

### Claim 1

A microelectronic device, comprising:
a semiconductor substrate including integrated circuitry and bond-pads electrically coupled to the integrated circuitry;
electrically conductive through-substrate interconnects in contact with corresponding bond-pads and having back side portions; and
a dielectric adhesive film at the back side of the semiconductor substrate, wherein the dielectric adhesive film comprises a film-over-wire die attach film having a plurality of preformed apertures extending completely through the film and at least partially aligned with the back side portions of the through-substrate interconnects, and wherein the film further includes conductive couplers in at least a portion of the apertures and in contact with the corresponding back side portions of the through-substrate interconnects.

### Claim 2 (depends on 1)

The microelectronic device of claim 1 wherein the conductive couplers are positioned to electrically couple the through-substrate interconnects to one or more external contacts within the footprint of the semiconductor substrate.

### Claim 3 (depends on 1)

The microelectronic device of claim 1 wherein the conductive couplers are composed of one or more layers of a conductive material deposited onto the corresponding back side portions of the through-substrate interconnects, and wherein the conductive material includes at least one of Cu, Ni, Au, palladium, solder, and a conductive polymer.

### Claim 4 (depends on 1)

The microelectronic device of claim 1 wherein the film has a first side in contact with the back side of the semiconductor substrate and a second side opposite the first side, and wherein external surfaces of the conductive couplers are at least approximately co-planar with the second side of the film.

### Claim 5 (depends on 1)

The microelectronic device of claim 1 wherein the conductive couplers are composed of a first conductive layer of Cu deposited onto the corresponding back side portions of the through-substrate interconnects, a second conductive layer of Ni over at least a portion of the first layer, and a third layer of Au over at least a portion of the second layer.

### Claim 6 (depends on 1)

The microelectronic device of claim 1 wherein the dielectric adhesive film has a first side in contact with the back side of the semiconductor substrate and a second side opposite the first side, and wherein external surfaces of the conductive couplers are not co-planar with the second side of the dielectric adhesive film.

### Claim 7 (depends on 1)

The microelectronic device of claim 1 wherein the dielectric adhesive film comprises an at least initially generally flexible film attached to the back side of the semiconductor substrate.

### Claim 8 (depends on 1)

The microelectronic device of claim 1 wherein the dielectric adhesive film has a thickness less than a thickness of the semiconductor substrate.

### Claim 9 (depends on 1)

The microelectronic device of claim 1 wherein the dielectric adhesive film comprises a single, unitary piece of adhesive film having a footprint at least approximately identical to a footprint of the semiconductor substrate.

### Claim 10 (depends on 1)

The microelectronic device of claim 1 wherein the semiconductor substrate has a thickness of between approximately 50 to 100 microns.

### Claim 11 (depends on 1)

The microelectronic device of claim 1 wherein the individual preformed apertures have a first cross-sectional dimension larger than a second cross-sectional dimension of the back side portions of the corresponding through-substrate interconnects.

### Claim 12 (depends on 1)

The microelectronic device of claim 1 wherein the microelectronic device comprises a first microelectronic device, and further comprising a second microelectronic device attached to the back side of the first microelectronic device in a stacked arrangement, and wherein:
the second microelectronic device comprises an active side facing the first device, a back side opposite the active side, second integrated circuitry, a plurality of terminals electrically coupled to the second integrated circuitry, and a plurality of electrically conductive second through-substrate interconnects electrically coupled to the corresponding terminals; and
the dielectric adhesive film is attached to the active side of the second microelectronic device.

### Claim 13 (depends on 12)

The microelectronic device of claim 12 wherein:
the dielectric adhesive film covers at least approximately all of the back side of the first microelectronic device and the front side of the second microelectronic device; and
the conductive couplers are electrically coupled to internal active features of both the first microelectronic device and the second microelectronic device.

### Claim 14 (depends on 12)

The microelectronic device of claim 12 wherein the first microelectronic device and the second microelectronic device each comprise one of a processor, a memory device, an imager, a filter, or a sensor.

### Claim 15 (depends on 12)

The microelectronic device of claim 12 wherein the first microelectronic device is electrically isolated from the second microelectronic device apart from the conductive couplers.