# US 8,148,800 B2 · Nanowire-based semiconductor device and method employing removal of residual carriers > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,148,800 B2 - Document ID: US8148800B2 - Status: Granted - Kind: B2 - Application number: 12/243,182 - Filed: 2008-10-01 - Published: 2009-07-16 - Granted: 2012-04-03 - Earliest claimed: 2008-01-11 - Assignees: Hewlett-Packard Development Company, L.P. - Inventors: Theodore I. Kamins - Web page: https://patentgrep.com/patent/US8148800B2 ## CPC - H10D 62/118: {Nanostructure semiconductor bodies} - B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic - B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals - H10D 8/00: Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) - H10D 62/121: {oriented parallel to substrates} - H10D 62/122: {oriented at angles to substrates, e.g. perpendicular to substrates} - H10F 77/14: Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies - H10H 20/818: within the light-emitting regions - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A nanowire-based device and method employ removal of residual carriers. The nanowire-based device includes a semiconductor nanowire having a semiconductor junction, and a residual carrier sink. The residual carrier sink is located at or adjacent to the semiconductor nanowire near the semiconductor junction and employs one or both of enhanced recombination and direct extraction of the residual carriers. The method includes providing a semiconductor nanowire, forming a semiconductor junction within the semiconductor nanowire, forming a residual carrier sink, and removing residual carriers from the semiconductor junction region using the residual carrier sink. ## Claims ### Claim 1 A nanowire-based-device comprising: a semiconductor nanowire having a semiconductor junction; and a residual carrier sink, the residual carrier sink being adjacent to a surface of the nanowire proximal to the semiconductor junction, wherein the residual carrier sink facilitates removal of residual carriers from the semiconductor junction using one or both enhanced recombination and direct extraction of residual carriers, the nanowire-based device being one of an optical detector and an optical modulator. ### Claim 2 (depends on 1) The nanowire-based device of claim 1, wherein the nanowire-based device further comprises an optical emitter, the residual carriers being free carriers that remain near the semiconductor junction after a forward bias current is one of reduced or switched off, the removal reducing a probability that the residual carriers will undergo radiative recombination within an active region of the semiconductor junction. ### Claim 3 (depends on 1) The nanowire-based device of claim 1, wherein when the nanowire-based device is an optical detector, the residual carriers being free carriers created by an incident optical signal that remain near the semiconductor junction after the incident optical signal is one of reduced or switched off, the removal reducing a probability that the residual carriers will contribute to a photocurrent of the optical detector. ### Claim 4 (depends on 1) The nanowire-based device of claim 1, wherein when the nanowire-based device is an optical modulator, the residual carriers being free carriers within an active region of the semiconductor junction that remain after an electrical modulation control signal is reduced, the removal reducing a probability that the residual carriers will affect an optical signal passing through the semiconductor junction. ### Claim 5 (depends on 1) The nanowire-based device of claim 1, wherein the semiconductor junction is one of a p-n junction, p-i-n junction and a heterojunction that includes either a p-n junction or a p-i-n junction. ### Claim 6 (depends on 1) The nanowire-based device of claim 1, wherein the residual carrier sink comprises a region adjacent to a surface of the semiconductor nanowire, the region having enhanced state density relative to a state density of the nanowire outside of the region, the enhanced state density providing the enhanced recombination. ### Claim 7 (depends on 6) The nanowire-based device of claim 6, wherein the region having enhanced state density comprises a native oxide on a surface of the nanowire adjacent to the semiconductor junction. ### Claim 8 (depends on 6) The nanowire-based device of claim 6, wherein the region having enhanced state density comprises a radiation-disrupted surface region of the semiconductor nanowire adjacent to the semiconductor junction. ### Claim 9 (depends on 6) The nanowire-based device of claim 6, wherein the region having enhanced state density comprises a dopant, a concentration of the dopant being higher near the surface of the semiconductor nanowire relative to a dopant concentration near a center of the semiconductor nanowire, the center being internal to the surface. ### Claim 10 (depends on 1) The nanowire-based device of claim 1, wherein the residual carrier sink comprises an extraction electrode in contact with a surface of the semiconductor nanowire proximal to the semiconductor junction, the extraction electrode being electrically biased to facilitate residual carrier extraction. ### Claim 11 (depends on 10) The nanowire-based device of claim 10, wherein the residual carrier sink further comprises a heavily doped region between the extraction electrode and an active region of the semiconductor junction, the heavily doped region being adjacent to the surface of the semiconductor nanowire, the heavily doped region comprising a dopant that has a concentration that is higher than a doping concentration of the active region. ### Claim 12 A nanowire-based semiconductor device comprising: a nanowire comprising a semiconductor material, the semiconductor material comprising a plurality of dopants that forms a semiconductor junction, the semiconductor junction being axially located within the nanowire; and a residual carrier sink proximal to the semiconductor junction, the residual carrier sink comprising a region of the nanowire either at or adjacent to a surface of the nanowire, the region having enhanced state density relative to a state density of the semiconductor material of the nanowire outside of the region, wherein the residual carrier sink facilitates removal of residual carriers from the semiconductor junction. ### Claim 13 (depends on 12) The nanowire-based semiconductor device of claim 12, wherein the nanowire-based semiconductor device is an optical emitter. ### Claim 14 (depends on 12) The nanowire-based semiconductor device of claim 12, wherein the nanowire-based semiconductor device is an optical detector. ### Claim 15 (depends on 12) The nanowire-based semiconductor device of claim 12, wherein the nanowire-based semiconductor device is an optical modulator. ### Claim 16 A method of residual carrier removal in a nanowire-based device, the method comprising: providing a semiconductor nanowire; forming a semiconductor junction within the semiconductor nanowire; forming a residual carrier sink proximal to the semiconductor junction adjacent to a surface of the semiconductor nanowire; and removing residual carriers from the semiconductor junction using the residual carrier sink, wherein removing residual carriers using the residual carrier sink employs one or both of enhanced recombination and biased residual carrier extraction, and wherein the nanowire-based device is one of an optical detector and an optical modulator. ### Claim 17 (depends on 16) The method of residual carrier removal of claim 16, wherein forming a residual carrier sink comprises providing a surface region on the nanowire proximal to the semiconductor junction, the surface region comprising an enhanced state density compared to a state density of the semiconductor nanowire outside the region, the enhanced state density acting as the residual carrier sink to attract and eliminate residual carriers from the semiconductor junction by enhanced recombination. ### Claim 18 (depends on 17) The method of residual carrier removal of claim 17, wherein providing a surface region on the nanowire comprises one or more of forming a native oxide on the surface region, subjecting the surface region to plasma containing a low energy species, and irradiating the surface region with ultraviolet radiation, such that a layer near the surface is disrupted. ### Claim 19 (depends on 16) The method of residual carrier removal of claim 16, wherein forming a residual carrier sink comprises providing an electrode on and in electrical contact with a surface of the nanowire in the vicinity, of the semiconductor junction and, wherein removing residual carriers comprises applying a bias to the electrode having a polarity opposite that of a charge of the residual carriers, the applied bias acting as the residual carrier sink to attract and remove residual carriers by direct extraction from the semiconductor junction. ### Claim 20 (depends on 16) The method of residual carrier removal of claim 16, wherein forming a residual carrier sink comprises providing a heavily doped region adjacent to a surface of the semiconductor nanowire proximal to the semiconductor junction, wherein the heavily doped region facilitates enhanced recombination of the residual carriers during removing.