Films and structures for metal oxide semiconductor light emitting devices and methods
AssigneeMoxtronics, Inc.
InventorsYungryel Ryu, Tae-seok Lee, Henry W. White
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Abstract
Semiconductor films and structures, such as films and structures utilizing zinc oxide or other metal oxides, and processes for forming such films and structures, are provided for use in metal oxide semiconductor light emitting devices and other metal oxide semiconductor devices, such as ZnO based semiconductor devices.
Claims24
A p-n junction based semiconductor light emitting device, comprising:
- a substrate,
- a ZnO based buffer layer formed on said substrate,
- a ZnO based first cladding layer formed on said ZnO based layer,
- a ZnO based layer formed between said buffer layer and said first cladding layer,
- a ZnO based first barrier layer formed on said first cladding layer,
- a ZnO based active layer formed on said first barrier layer,
- a ZnO based second barrier layer formed on said active layer,
- a ZnO based second cladding layer formed on said second barrier layer, and
- a ZnO based topmost electrical contact layer formed on said second cladding layer,
- wherein at least one layer, selected from the group of layers consisting of the buffer layer, the layer formed between the buffer layer and the first cladding layer, the first cladding layer, the first barrier layer, the active layer, the second barrier layer, the second cladding layer, and the topmost electrical contact layer, comprises Be with one or more of the alloys ZnCdOSSe, ZnCdSeO, ZnCdSO, ZnSSeO and ZnSO, the atomic fraction of Be and the one or more alloys being selected such that a lattice structure of the at least one layer matches a lattice structure of an adjacent one of said group of layers.
A p-n junction based semiconductor light emitting device, comprising:
- a substrate,
- a ZnO based first cladding layer formed on the ZnO based layer,
- a ZnO based layer formed between the substrate and the first cladding layer,
- a ZnO based first barrier layer formed on the first cladding layer,
- a ZnO based active layer formed on the first barrier layer,
- a ZnO based second barrier layer formed on the active layer,
- a ZnO based second cladding layer formed on the second barrier layer, and at least one contact layer selected from the group consisting of:
- (1) a ZnO based topmost electrical contact layer formed on the second cladding layer, and (2) a metallic reflector/electrical contact layer formed on any of said second cladding layer or an exposed face of the substrate,
- wherein at least one layer selected from the group of layers consisting of the layer formed between the substrate and the first cladding layer, the first cladding layer, the first barrier layer, the active layer, the second barrier layer, the second cladding layer, and the at least one contact layer comprises Be with one or more of the alloys ZnCdOSSe, ZnCdSeO, ZnCdSO, ZnSSeO and ZnSO, the atomic fraction of Be and the one or more alloys being selected such that a lattice structure of the at least one layer matches a lattice structure of an adjacent one of said group of layers.
A p-n junction based semiconductor light emitting device comprising a ZnO based active layer, a p-type layer, an n-type layer, and an oxide layer comprising Be with one or more of the alloys ZnCdOSSe, ZnCdSeO, ZnCdSO, ZnSSeO and ZnSO, the atomic fraction of Be and the one or more alloys being selected such that a lattice structure of the oxide layer matches a lattice structure of an adjacent one of the active layer, p-type layer, and n-type layer.
Dependencies are inferred from the claim text.