# US 8,147,927 B2 · Methods of making multilayered structures

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- Number: US 8,147,927 B2
- Document ID: US8147927B2
- Status: Granted
- Kind: B2
- Application number: 13/068,616
- Filed: 2011-05-16
- Published: 2011-09-15
- Granted: 2012-04-03
- Earliest claimed: 2007-08-29
- Assignees: SP3, Inc.
- Inventors: Jerry Wayne Zimmer; Gerard James Chandler
- Web page: https://patentgrep.com/patent/US8147927B2

## CPC

- C04B 37/006: {consisting of metals or metal salts}
- H10W 40/254: {Diamond}
- C04B 2237/122: based on refractory metals
- C04B 2237/124: based on copper
- C04B 2237/125: based on noble metals, e.g. silver
- C04B 2237/363: Carbon
- H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates}
- Y10T 156/10: Methods of surface bonding and/or assembly therefor
- Y10T 428/12549: Adjacent to each other
- Y10T 428/24975: No layer or component greater than 5 mils thick
- Y10T 428/265: 1 mil or less
- Y10T 428/30: Self-sustaining carbon mass or layer with impregnant or other layer
- Y10T 428/31685: Natural source polyamide [e.g., casein, gelatin, etc.]
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

The present invention relates to a multilayered structure including at least one diamond layer and methods of making the multilayered structures. The multilayered structure includes a diamond layer having a top surface and a bottom surface, a first thin adhesion layer on the top surface, a second thin adhesion layer on the bottom surface, a first metal layer having a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K, wherein the first metal layer is deposited on the first thin adhesion layer, and a second metal layer having a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K, wherein the second metal layer is deposited on the second thin adhesion layer.

## Claims

### Claim 1

A method of making a multilayered structure, comprising:
growing a diamond layer on a substrate, wherein the bottom surface of the diamond rests on the substrate;
applying a first thin adhesion layer on the top surface of the diamond layer;
applying a first metal layer having a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K on the first thin adhesion layer;
removing the substrate;
applying a second thin adhesion layer on the bottom surface of the diamond layer; and
applying a second metal layer having a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K on the second thin adhesion layer, wherein a CTE matching equation determines the thickness of the diamond layer, the first metal layer, and the second metal layer such that the CTE of the multilayered structure matches the CTE of a semiconductor, wherein the thickness of each of the first and second thin adhesion layers is less than 10% compared to the thickness of each of the first and second metal layers.

### Claim 2 (depends on 1)

The method of claim 1, wherein the diamond layers are made electrically conductive by adding a p-type dopant to the diamond during the diamond growth step.

### Claim 3 (depends on 1)

The method of claim 1, further comprising determining the value of the coefficient of thermal expansion at the surface of the first metal layer by using the ratio of the thicknesses, the Young's modulus and the coefficients of thermal expansion of the first metal layer, the second metal layer, and the diamond layer.

### Claim 4 (depends on 1)

The method of claim 1, further comprising determining the thickness of the diamond layer by the following equation:
tD=tM1×(ED/EM1)×((CTEM1−CTEC)/(CTEC−CTED))+tM2×(ED/EM2)×((CTEM2−CTEC)/(CTEC−CTED)), wherein as follows:
tD=thickness of the diamond layer
tM1=thickness of the first metal layer
tM2=thickness of the second metal layer
ED=Young's modulus of the diamond layer
EM1=Young's modulus of the first metal layer
EM2=Young's modulus of the second metal layer
CTED=coefficient of thermal expansion of the diamond layer
CTEM1=coefficient of thermal expansion of the first metal layer
CTEM2=coefficient of thermal expansion of the second metal layer
CTEC=coefficient of thermal expansion for surface of the multilayered structure.

### Claim 5 (depends on 1)

The method of claim 1, further comprising depositing additional layers of metal on the first metal layer to facilitate attachment of an electronic or optical component.

### Claim 6 (depends on 1)

The method of claim 1, further comprising patterning the first metal layer and the first thin adhesion layer into electrically isolated regions.

### Claim 7

A method of making a multilayered structure, comprising:
growing a first diamond layer on a first substrate, wherein the bottom surface of the first diamond layer rests on the first substrate;
growing a second diamond layer on a second substrate, wherein the bottom surface of the second diamond layer rests on the second substrate;
brazing the top surface of the first diamond layer to the top surface of the second diamond layer wherein the brazing alloy adheres to the first and second diamond layers and has a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K;
removing the first and second substrates;
applying a first thin adhesion layer on the bottom surface of the first diamond layer;
applying a first metal layer having a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K on the first thin adhesion layer;
applying a second thin adhesion layer on the bottom surface of the second diamond layer; and
applying a second metal layer having a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K on the second thin adhesion layer, wherein a CTE matching equation determines the thickness of the diamond layer, the first metal layer, and the second metal layer such that the CTE of the multilayered structure matches the CTE of a semiconductor, wherein the thickness of each of the first and second thin adhesion layers is less than 10% compared to the thickness of each of the first and second metal layers.

### Claim 8 (depends on 7)

The method of claim 7, wherein the diamond layers are made electrically conductive by adding a p-type dopant to the diamond during the diamond growth step.

### Claim 9 (depends on 7)

The method of claim 7, further comprising depositing additional layers of metal on the first metal layer to facilitate attachment of an electronic or optical component.

### Claim 10 (depends on 7)

The method of claim 7, further comprising patterning the first metal layer and the first thin adhesion layer into electrically isolated regions.

### Claim 11 (depends on 7)

The method of claim 7, wherein the brazing alloy is selected from a group of metals consisting of copper, silver, gold, tin, and/or indium.

### Claim 12 (depends on 7)

The method of claim 7, further comprising determining the thickness of the diamond layer by the following equation:
tD=tM1×(ED/EM1)×((CTEM1−CTEC)/(CTED−CTED))+tM2×(ED/EM2)×((CTEM2−CTEC)/(CTEC−CTED)) wherein as follows:
tD=thickness of each of the first and second diamond layers
tM1=thickness of the first outer metal layer
tM2=thickness of the second outer metal layer
ED=Young's modulus of the first diamond layer
EM1=Young's modulus of first metal layer
EM2=Young's modulus of the second metal layer
CTED=coefficient of thermal expansion of the first diamond layer
CTEM1=coefficient of thermal expansion of first metal layer
CTEM2=coefficient of thermal expansion of second metal layer
CTEC=coefficient of thermal expansion for surface of multilayered structure.

### Claim 13 (depends on 7)

The method of claim 7, wherein the brazing alloy includes a carbide forming metal.

### Claim 14 (depends on 13)

The method of claim 13, wherein the carbide forming metal is selected from a group of metals consisting of titanium, chromium, tungsten, tantalum, vanadium, niobium, hafnium, zirconium or nickel.

### Claim 15

A method of making a multilayered structure, comprising:
growing a first diamond layer on a first substrate, wherein the bottom surface of the first diamond layer rests on the first substrate;
applying a first thin adhesion layer on the top surface of the first diamond layer;
applying a first metal layer having a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K on the first thin adhesion layer;
growing a second diamond layer on a second substrate, wherein the bottom surface of the second diamond layer rests on the second substrate;
applying a second thin adhesion layer on the top surface of the second diamond layer;
applying a second metal layer having a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K on the second thin adhesion layer;
brazing or soldering the top surface of the first metal layer to the top surface of the second metal layer;
removing the first and second substrates;
applying a third thin adhesion layer on the bottom surface of the first diamond layer;
applying a third metal layer having a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K on the third thin adhesion layer;
applying a fourth thin adhesion layer on the bottom surface of the second diamond layer; and
applying a fourth metal layer having a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K on the fourth thin adhesion layer, wherein a CTE matching equation determines the thickness of the diamond layer, the first metal layer, the second metal layer, the third metal layer, and the fourth metal layer such that the CTE of the multilayered structure matches the CTE of a semiconductor, wherein the thickness of each of the first thin adhesion layer, the second thin adhesion layer, the third thin adhesion layer, and the fourth thin adhesion layer is less than 10% compared to the thickness of each of the first metal layer, the second metal layer, the third metal layer, and the fourth metal layer.

### Claim 16 (depends on 15)

The method of claim 15, wherein the diamond layers are made electrically conductive by adding a p-type dopant to the diamond during the diamond growth step.

### Claim 17 (depends on 15)

The method of claim 15, further comprising depositing additional layers of metal on the first metal layer to facilitate attachment of an electronic or optical component.

### Claim 18 (depends on 15)

The method of claim 15, further comprising patterning the first metal layer and the first thin adhesion layer into electrically isolated regions.

### Claim 19 (depends on 15)

The method of claim 15, wherein the brazing alloy is selected from a group of metals consisting of copper, silver, gold, tin, and/or indium.

### Claim 20 (depends on 15)

The method of claim 15, wherein the solder alloy is selected from a group of metals consisting of silver, gold, tin, indium, germanium, lead, antimony, palladium and/or silicon.

### Claim 21 (depends on 15)

The method of claim 15, further comprising determining the thickness of the diamond layer by the following equation:
tD=tM1×(ED/EM1)×((CTEM1−CTEC)/(CTEC−CTED))+tM2×(ED/EM2)×((CTEM2−CTEC)/(CTEC−CTED)) wherein as follows:
tD=thickness of each of the first and second diamond layers
tM1=thickness of the first outer metal layer
tM2=thickness of the second outer metal layer
ED=Young's modulus of the first diamond layer
EM1=Young's modulus of first metal layer
EM2=Young's modulus of the second metal layer
CTED=coefficient of thermal expansion of the first diamond layer
CTEM1=coefficient of thermal expansion of first metal layer
CTEM2=coefficient of thermal expansion of second metal layer
CTEC=coefficient of thermal expansion for surface of multilayered structure.