Method of designing a semiconductor device
AssigneeRenesas Electronics Corporation
InventorNoriaki Oda
Life of this patent
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Abstract
Aiming at providing a method of designing a semiconductor device capable of producing a semiconductor device which expresses performances adapted to required performances, the present invention sets a plurality of suites of device parameters, containing parameters relevant to transistor characteristics (transistor parameters) and parameters relevant to interconnect characteristics (interconnect parameters) corresponded to the transistor characteristics, for a single CMOS generation, selecting, out of the plurality of suites, a suite matched to performances required for a semiconductor to be designed, and designing the semiconductor device.
Claims36
A method of designing a semiconductor device using data stored in a memory device and being readable using a program, comprising:
- setting a plurality of device parameters containing transistor characteristic parameters and interconnect characteristic parameters corresponded to the transistor characteristic parameters for a single CMOS generation using said stored data in said memory device;
- and
- selecting, out of said plurality of device parameters, a grouping matched to performances required for a semiconductor to be designed, and designing said semiconductor device,
- wherein said interconnect characteristic parameters contain interconnect capacitance, interconnect resistance of each layer of a multi-layered interconnect, and via hole resistance, matched to performances required for a semiconductor device to be designed.
A method of designing a semiconductor device using data stored in a memory device and being readable using a program, comprising:
- setting a plurality of device parameters containing transistor characteristic parameters and interconnect characteristic parameters corresponded to the transistor characteristic parameters for a single CMOS generation using said stored data in said memory device;
- and
- selecting, out of said plurality of device parameters, a grouping matched to performances required for a semiconductor to be designed, and designing said semiconductor device,
- wherein said interconnect characteristic parameters include capacitance and resistance of each layer of local interconnect, intermediate interconnect, semi-global interconnect and global interconnect, and resistance of viaholes connecting the individual interconnect layer.
A method of designing a semiconductor device using data stored in a memory device and being readable using a program, comprising:
- setting a plurality of device parameters containing transistor characteristic parameters and interconnect characteristic parameters corresponded to the transistor characteristic parameters for a single CMOS generation using said stored data in said memory device;
- and
- selecting, out of said plurality of device parameters, a grouping matched to performances required for a semiconductor to be designed, and designing said semiconductor device,
- wherein said interconnect characteristic parameters include temperature coefficients of the individual characteristics of interconnect capacitance, interconnect resistance, and via hole resistance.
Dependencies are inferred from the claim text.