Back to results
US 8,145,855 B2Granted
Built in on-chip data scrambler for non-volatile memory
AssigneeSanDisk Technologies LLC
InventorsJun Wan, Yupin K. Fong, Man L. Mui
Life of this patent
Estimating the term…
Abstract
A non-volatile memory in which data is randomized before being stored in the non-volatile memory to minimize data pattern-related read failures. Randomizing is performed using circuitry on the memory die so that the memory die is portable relative to an external, off-chip controller. Circuitry on the memory die scrambles user data based on a key which is generated using a seed which is shifted according to a write address. Corresponding on-chip descrambling is also provided.
Claims20
A non-volatile memory device, comprising:
- a memory die;
- a memory array of non-volatile storage elements in NAND strings fabricated on the memory die;
- a plurality of bit lines in communication with the non-volatile storage elements;
- sense blocks for the memory array, fabricated on the memory die, each sense block comprising a set of sense modules, each sense module in communication with a respective bit line of the plurality of bit lines, each sense block comprising a common processor in communication with each of the sense modules in the sense block;
- and
- circuitry fabricated on the memory die, the circuitry:
- (a) receives, from a controller which is not fabricated on the memory die, at least one write command and associated data, including user data, to be written to the non-volatile storage elements, (b) in response to the at least one write command, provides respective different portions of the associated data to the common processors, the common processors:
- (c) generate respective different keys for the respective different portions of the associated data, based on respective different addresses of respective different locations of the memory array, (d) encode the respective different portions of the associated data based on the respective different keys to provide respective different portions of modified data, and (e) provides the respective different portions of modified data to the sense modules to be written to the respective different locations of the memory array.
5 more elements
A non-volatile memory device, comprising:
- a controller which is configured to communicate with circuitry which is fabricated on a memory die which includes a memory array of non-volatile storage elements, the controller is not fabricated on the memory die, the controller provides to the circuitry at least one write command and associated data, in response to which the circuitry provides respective different portions of the associated data to sense blocks for the memory array, fabricated on the memory die, the sense blocks generate respective different keys for respective different portions of the associated data, encode the respective different portions of the associated data based on the respective different keys to provide respective different portions of modified data, and store the respective different portions of modified data in respective different locations of the memory array.
A non-volatile memory device, comprising:
- a memory die;
- a memory array of non-volatile storage elements in NAND strings fabricated on the memory die;
- a plurality of bit lines in communication with the non-volatile storage elements;
- sense blocks for the memory array, fabricated on the memory die, each sense block comprising a set of sense modules, each sense module in communication with a respective bit line of the plurality of bit lines, each sense block comprising a common processor in communication with each of the sense modules in the sense block;
- and
- circuitry fabricated on the memory die;
- the circuitry:
- (a) receives, from a controller which is not fabricated on the memory die, at least one read command regarding associated data to be read from the non-volatile storage elements, (b) in response to the at least one read command, provides respective read commands to the common processors, the common processors, in response to the respective read commands:
- (c) generate respective different keys for respective different portions of the associated data, the respective different keys are based on respective different addresses of respective different locations of the memory array, (d) communicate with the sense modules to read the respective different portions of the associated data, and (e) decode the respective different portions of the associated data based on the respective different keys to provide respective different portions of decoded data.
6 more elements
Dependencies are inferred from the claim text.