Method of controlling a magnetoresistive device using an electric field pulse
AssigneesHitachi, Ltd., Universite Paris-Sud Xi, Centre National De La Recherche Scientifique
InventorsJoerg Wunderlich, Tomas Jungwirth, Jan Zemen, Bryan Gallagher, Claude Chappert, Thibaut Devolder
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Abstract
A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.
Claims13
A method of operating a magnetoresistive device comprising a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate, wherein the gate is operable to cause a change of orientation of magnetic anisotropy only through capacitive coupling to the ferromagnetic region, the method comprising:
- applying an electric field pulse to the ferromagnetic region using the gate so as to vary charge carrier distribution in the ferromagnetic region and so cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations, wherein the electric field pulse has a duration, t, which is a multiple of a quarter of about tprecess:
- t
- precess
- =
- 1
- /
- f
- precess
- =
- 1
- γ
- 2
-
- π
-
- B
- A
- where γ is the gyromagnetic constant γ=gμB/ (2.2×1015mA−1s−1) and BA is the magnetic anisotropy field of the ferromagnetic semiconductor such that the electric field pulse triggers precessional switching of the magnetisation between the first and second orientations.
Dependencies are inferred from the claim text.