Light-emitting device and method of manufacturing the same, and method of operating manufacturing apparatus

A light-emitting device comprising:

• a first thin film transistor provided in a pixel portion over a substrate;
• second and third thin film transistors provided in a portion outside the pixel portion over the substrate;
• a first electrode electrically connected to the first thin film transistor;
• an insulating film comprising an organic insulating material formed over the first, second and third thin film transistors, the insulating film covering an end of the first electrode;
• an organic compound layer formed over the first electrode;
• and
• a second electrode formed over the organic compound layer and the insulating film,
• wherein the second thin film transistor is overlapped with the insulating film and the second electrode, and
• wherein the third thin film transistor is overlapped with the insulating film and is not overlapped with the second electrode.

A light-emitting device comprising:

• a first thin film transistor provided in a pixel portion over a substrate;
• second and third thin film transistors provided in a portion outside the pixel portion over the substrate;
• a first electrode electrically connected to the first thin film transistor;
• an insulating film comprising an organic insulating material formed over the first thin film transistor, the insulating film covering an end of the first electrode;
• an organic compound layer formed over the first electrode;
• and
• a second electrode formed over the organic compound layer and the second thin film transistor,
• wherein the second thin film transistor is overlapped with the second electrode,
• wherein the third thin film transistor is not overlapped with the second electrode, and
• wherein the second electrode comprises a lower layer formed of a first material and an upper layer formed of a second material which is different from the first material.

A light-emitting device comprising:

• a first thin film transistor provided in a pixel portion over a substrate;
• second and third thin film transistors provided in a portion outside the pixel portion over the substrate;
• a first electrode formed over and electrically connected to the first thin film transistor;
• an insulating film comprising an organic insulating material formed over the first, second and third thin film transistors, the insulating film covering an end of the first electrode;
• an organic compound layer formed over the first electrode;
• and
• a second electrode formed over the organic compound layer and the insulating film,
• wherein the second thin film transistor is overlapped with the insulating film and the second electrode,
• wherein the third thin film transistor is overlapped with the insulating film and is not overlapped with the second electrode, and
• wherein the second electrode comprises a lower layer formed of a first material and an upper layer formed of a second material which is different from the first material.