Redundancy design with electro-migration immunity
AssigneeInternational Business Machines Corporation
InventorsLouis L. Hsu, Conal E. Murray, Ping-Chuan Wang, Chih-Chao Yang
Life of this patent
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Abstract
An IC interconnect for high direct current (DC) that is substantially immune to electro-migration (EM) damage, a design structure of the IC interconnect and a method of manufacture of the IC interconnect is provided. The structure has electro-migration immunity and redundancy of design, which includes a plurality of wires laid out in parallel and each of which are coated with a liner material. Two adjacent of the wires are physically contacted to each other.
Claims25
A structure having electro-migration immunity and redundancy of design, comprising:
- a plurality of wires laid out in parallel and each of which are coated with a liner material,
- wherein at least two adjacent wires of the plurality of wires are contacted to each other,
- wherein grain boundaries of the plurality of wires span across a width of the plurality of wires and perpendicular to a current flow direction across a length of the plurality of wires, the grain boundaries having a width so that their resistivity is not impacted by electron scattering at an interface of each of the plurality of wires and the liner material, and
- wherein the plurality of wires comprise a plurality of vias each of which is lined with the liner material and filled with a metal, adjacent ones of the plurality of vias being devoid of insulator material therebetween.
A design structure embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, the design structure comprising:
- a plurality of metal wires laid out in parallel and each of which are coated with a liner material,
- wherein at least two adjacent metal wires of the plurality of metal wires are contacted to each other,
- wherein grain boundaries of the plurality of wires span across a width of the plurality of wires and perpendicular to a current flow direction across a length of the plurality of wires, the grain boundaries having a width so that their resistivity is not impacted by electron scattering at an interface of each of the plurality of wires and the liner material, and
- wherein the plurality of wires forms a cluster-of-via structure at an intersection between inter-level wires, the cluster-of-via structure comprising a plurality of vias each of which are filled with a refractory metal and lined with the liner material, and the liner material covering a top side of each of the plurality of vias.
Dependencies are inferred from the claim text.