Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• (a) a first semiconductor chip having an upper surface and a rear surface opposite each other, and having a first pair of sides opposite each other in a plan view,
• the first semiconductor chip including
• an IGBT,
• an emitter electrode formed at the upper surface,
• a gate electrode bond pad formed at the upper surface,
• a bonding pad formed at the upper surface, and
• a collector electrode formed at the rear surface;
• (b) a second semiconductor chip having an upper surface and a rear surface opposite each other, and having a pair of sides opposite each other in the plan view,
• the second semiconductor chip including:
• a diode,
• an anode electrode formed at the upper surface of the second semiconductor chip, and
• a cathode formed at the rear surface of the second semiconductor chip;
• (c) a die pad over which the first semiconductor chip and the second semiconductor chip are mounted;
• (d) an external collector electrode integrally formed with the die pad;
• (e) a plate electrode which is electrically connected to the emitter electrode of the first semiconductor chip and the anode electrode of the second semiconductor chip;
• (f) an external emitter electrode which is electrically connected to the plate electrode;
• (g) an external gate electrode which is electrically connected to the gate electrode bond pad of the first semiconductor chip;
• (h) an external detection electrode provided for detecting a state of the IGBT of the first semiconductor chip;
• (i) a first wire which is electrically connected to the external gate electrode and the gate electrode bond pad of the first chip;
• and
• (j) a second wire which is electrically connected to the external detection electrode and the bonding pad of the first chip;
• and
• (k) a sealing body sealing the first and second semiconductor chips, the first and second wires, the plate electrode, a part of the die pad, a first portion of the external emitter electrode, a part of the external collector electrode, and a part of the external gate electrode,
• wherein the plate electrode overlaps with parts of both of the first pair of the sides of the first semiconductor chip in the plan view,
• wherein the plate electrode does not overlap with the gate electrode bond pad and the bonding pad in the plan view,
• wherein, in the plan view, the plate electrode overlaps with part of one side of the pair of sides of the second semiconductor chip,
• wherein an exposed portion of the external emitter electrode extends outwardly from an edge of said semiconductor device,
• wherein said first semiconductor chip and said second semiconductor chip are arranged over said die pad such that a distance of said first semiconductor chip to said edge of the semiconductor device from which said exposed portion of the external emitter electrode extends is less than a distance of said second semiconductor chip to said edge of the semiconductor device from which said exposed portion of the external emitter electrode extends,
• wherein the external emitter electrode is electrically connected to the plate electrode using solder,
• wherein a region is formed at the upper surface of the first semiconductor chip so as to substantially surround the emitter electrode and the bonding pad, said region having a same potential as that of the collector electrode,
• wherein the plate electrode extends over a side of said region and of the first semiconductor chip adjacent to the bonding pad and is configured to overlap with only a part of said side of said region in the plan view, and
• wherein, in the plan view, the plate electrode has a pair of sides that extend in a direction orthogonal to the first pair of sides of the first semiconductor chip, with a first cutout portion being formed in one of the pair of sides of the plate electrode such that the gate electrode bond pad is not covered by the plate electrode, and with a second cutout portion being formed in the other of the pair of sides of the plate electrode such that the bonding pad is not covered by the plate electrode.