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US 8,138,594 B2Granted
Semiconductor device and manufacturing method of a semiconductor device
AssigneeNEC Corporation
InventorShinji Tanaka
Life of this patent
Estimating the term…
Abstract
A semiconductor device of the present invention comprises a substrate and a first semiconductor element. The substrate comprises an inner layer conductor and a cavity comprising the bottom surface on which a part of the inner layer conductor is exposed. The first semiconductor element contacts, in the cavity, the inner layer conductor directly or via a good heat conductor material.
Claims7
A semiconductor device comprising:
- a substrate including a surface an inner layer conductor, the substrate defining a cavity, the cavity comprising a bottom surface on which a part of said inner layer conductor is exposed;
- a first semiconductor element contacting, in said cavity, said inner layer conductor directly or via a heat conductor material;
- a second semiconductor element connected electrically with said substrate and said first semiconductor element, wherein
- said bottom surface of said cavity is located inwards as compared to said surface of said substrate, such that said bottom surface is not flush with said surface,
- and at least a part of said first semiconductor element is located in said cavity.
2 more elements
Dependencies are inferred from the claim text.