Structures and methods of forming SiGe and SiGeC buried layer for SOI/SiGe technology
AssigneeInternational Business Machines Corporation
InventorsXuefeng Liu, Robert M. Rassel, Steven H. Voldman
Life of this patent
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Abstract
Semiconductor structures and methods of forming semiconductor structures, and more particularly to structures and methods of forming SiGe and/or SiGeC buried layers for SOI/SiGe devices. An integrated structure includes discontinuous, buried layers having alternating Si and SiGe or SiGeC regions. The structure further includes isolation structures at an interface between the Si and SiGe or SiGeC regions to reduce defects between the alternating regions. Devices are associated with the Si and SiGe or SiGeC regions. The invention is also directed to a design structure on which a circuit resides.
Claims23
A design structure embodied in a machine readable medium for designing, manufacturing, or testing a design, the design structure comprising:
- a buried oxide (BOX) layer formed on a substrate;
- a Si film formed on the BOX layer;
- discontinuous, buried layers having alternating Si regions and SiGe or SiGeC regions, wherein the Si regions and the SiGe or SiGeC regions are formed on the Si film, and the SiGe or SiGeC regions are in troughs;
- isolation structures at an interface between the Si regions and the SiGe or SiGeC regions to reduce defects between the alternating regions;
- a Si epitaxial layer formed on the discontinuous, buried layers and the isolation structures;
- and
- devices associated with the Si regions and the SiGe or SiGeC regions.
A design structure embodied in a machine readable medium for designing, manufacturing, or testing a design, the design structure comprising:
- a substrate;
- alternating Si regions and SiGe or SiGeC regions, wherein the Si regions and the SiGe or SiGeC regions are formed in physical contact with the substrate;
- isolation structures at an interface between the Si regions and the SiGe or SiGeC regions;
- a buried oxide (BOX) layer formed above the substrate;
- a first type device associated with the Si regions;
- and
- a second type device associated with the SiGe or SiGeC regions.
A design structure embodied in a machine readable medium for designing, manufacturing, or testing a design, the design structure comprising:
- a buried oxide (BOX) layer formed on a substrate;
- a Si film formed on the BOX layer;
- discontinuous, buried layers having alternating Si regions and SiGe or SiGeC regions, wherein the Si regions are in troughs and are formed on the Si film, and the SiGe or SiGeC regions are formed above the Si film;
- isolation structures at an interface between the Si regions and the SiGe or SiGeC regions to reduce defects between the alternating regions;
- and
- a Si epitaxial layer formed on the SiGe or SiGeC regions.
Dependencies are inferred from the claim text.